2SD2096T114E datasheet, PDF - EEWORLD Datasheet

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2SD2096T114E: Descriptiontrans npn 60v 3A hrt/TO-220fp; CategoryDiscrete semiconductor The transistor; File Size249KB，5 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/; Environmental Compliance

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2SD2096T114E Overview

trans npn 60v 3A hrt/TO-220fp

2SD2096T114E Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
package instruction	HRT, 3 PIN
Contacts	3
Reach Compliance Code	compli
Maximum collector current (IC)	3 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JESD-30 code	R-PSIP-T3
JESD-609 code	e3/e2
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power dissipation(Abs)	1.8 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN/TIN COPPER
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	10
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	8 MHz
Base Number Matches	1

2SD2096T114E Related Products

	2SD2096T114E	2SD2096T114/D	2SD2096T114/E	2SD2096T114F	2SD2096T114D	2SD2096T114/F
Description	trans npn 60v 3A hrt/TO-220fp	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, HRT, 3 PIN	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, HRT, 3 PIN	3A, 60V, NPN, Si, POWER TRANSISTOR, HRT, 3 PIN	3A, 60V, NPN, Si, POWER TRANSISTOR, HRT, 3 PIN	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, HRT, 3 PIN
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
package instruction	HRT, 3 PIN	HRT, 3 PIN	HRT, 3 PIN	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	HRT, 3 PIN
Contacts	3	3	3	3	3	3
Reach Compliance Code	compli	compli	compli	compli	compli	compli
Maximum collector current (IC)	3 A	3 A	3 A	3 A	3 A	3 A
Collector-emitter maximum voltage	60 V	60 V	60 V	60 V	60 V	60 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	100	60	100	160	60	160
JESD-30 code	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3
JESD-609 code	e3/e2	e2	e2	e3/e2	e3/e2	e2
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	1.8 W	1.8 W	1.8 W	1.8 W	1.8 W	1.8 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO
Terminal surface	TIN/TIN COPPER	Tin/Copper (Sn/Cu)	Tin/Copper (Sn/Cu)	TIN/TIN COPPER	TIN/TIN COPPER	Tin/Copper (Sn/Cu)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	10	10	10	10	10	10
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	8 MHz	8 MHz	8 MHz	8 MHz	8 MHz	8 MHz
Base Number Matches	1	1	1	1	1	1

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