Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, HRT, 3 PIN
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| package instruction | HRT, 3 PIN |
| Contacts | 3 |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 3 A |
| Collector-emitter maximum voltage | 60 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 60 |
| JESD-30 code | R-PSIP-T3 |
| JESD-609 code | e2 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 1.8 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Copper (Sn/Cu) |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | 10 |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 8 MHz |
| VCEsat-Max | 1 V |
| Base Number Matches | 1 |
| 2SD2096T114/D | 2SD2096T114/E | 2SD2096T114F | 2SD2096T114D | 2SD2096T114/F | 2SD2096T114E | |
|---|---|---|---|---|---|---|
| Description | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, HRT, 3 PIN | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, HRT, 3 PIN | 3A, 60V, NPN, Si, POWER TRANSISTOR, HRT, 3 PIN | 3A, 60V, NPN, Si, POWER TRANSISTOR, HRT, 3 PIN | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, HRT, 3 PIN | trans npn 60v 3A hrt/TO-220fp |
| Is it lead-free? | Lead free | Lead free | Lead free | Lead free | Lead free | Lead free |
| Is it Rohs certified? | conform to | conform to | conform to | conform to | conform to | conform to |
| package instruction | HRT, 3 PIN | HRT, 3 PIN | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 | HRT, 3 PIN | HRT, 3 PIN |
| Contacts | 3 | 3 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | compli | compli | compli | compli | compli | compli |
| Maximum collector current (IC) | 3 A | 3 A | 3 A | 3 A | 3 A | 3 A |
| Collector-emitter maximum voltage | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 60 | 100 | 160 | 60 | 160 | 100 |
| JESD-30 code | R-PSIP-T3 | R-PSIP-T3 | R-PSIP-T3 | R-PSIP-T3 | R-PSIP-T3 | R-PSIP-T3 |
| JESD-609 code | e2 | e2 | e3/e2 | e3/e2 | e2 | e3/e2 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| Peak Reflow Temperature (Celsius) | 260 | 260 | 260 | 260 | 260 | 260 |
| Polarity/channel type | NPN | NPN | NPN | NPN | NPN | NPN |
| Maximum power dissipation(Abs) | 1.8 W | 1.8 W | 1.8 W | 1.8 W | 1.8 W | 1.8 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO | NO |
| Terminal surface | Tin/Copper (Sn/Cu) | Tin/Copper (Sn/Cu) | TIN/TIN COPPER | TIN/TIN COPPER | Tin/Copper (Sn/Cu) | TIN/TIN COPPER |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | 10 | 10 | 10 | 10 | 10 | 10 |
| transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 8 MHz | 8 MHz | 8 MHz | 8 MHz | 8 MHz | 8 MHz |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 |
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