SMBJ8.0 datasheet, PDF - EEWORLD Datasheet

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SMBJ8.0: DescriptionSURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR surface mount transient suppressor; CategoryDiscrete semiconductor; File Size1MB，3 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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SMBJ8.0 Overview

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR surface mount transient suppressor

Features

Product Name: SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

Product model: SMBJ8.0

product features:

For surface mounted application

Low profile package

Built-in strain relief

Glass passivated junction

Fast response time : Typically less than 1.0ps from 0 volt to BV min.

Typical IR less than 1uA above 10V

High temperature soldering guaranteed: 250℃/ 10 seconds at terminals

Plastic material used carries Underwriters Laboratory Flammability Classification 94V-0

600 watts peak pulse power capability with a 10×1000 us waveform by 0.01% duty cycle

Mechanical data:

Casea: molded plastic

Terminals: Solder plated

Polarity: Indicated by cathode band

Standard Pcakaging : 16mm tape (EIA STD RS-481)

Weight: 0.093 gram

Maximum Ratings and Electrical Characteristics:

Rating at 25℃ ambient temperature unless otherwise specified.

product data:

Peak Power Dissipation at Ta=25℃ Tp=1ms PPK Forward power consumption: Minimun 600W

Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method)- Unidirectional Only IFSM Forward surge current: 100A

Maximum Instaneous Forward Voltage at 100A for Unidirectional Only

VF Maximum forward voltage drop: 3.5/5.0 V

Operating and Storage Temperature Range Tj. Tstg Operating Junction Temperature: -65 to +150℃

Breakdown Voltage V(BR) Breakdown Voltage: Min: 8.89V Max: 10.9V

Test Current at IT Test current: 1.0mA

Stand-Off Voltage Vwm Stand-Off Voltage: 8.0V

Max Reverse Leakage at Vwm IR Maximum reverse leakage current: 50μA

Max Peak Pulse Current IPPM Maximum peak pulse current: 42A

Max Clamping Voltage at IPPM VC 最大箝位电压：15V

Package: SMB/DO214-AA

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