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2SD2096T114F

Description
3A, 60V, NPN, Si, POWER TRANSISTOR, HRT, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size249KB,5 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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2SD2096T114F Overview

3A, 60V, NPN, Si, POWER TRANSISTOR, HRT, 3 PIN

2SD2096T114F Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codecompli
Maximum collector current (IC)3 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)160
JESD-30 codeR-PSIP-T3
JESD-609 codee3/e2
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)1.8 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN/TIN COPPER
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature10
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)8 MHz
Base Number Matches1

2SD2096T114F Related Products

2SD2096T114F 2SD2096T114/D 2SD2096T114/E 2SD2096T114D 2SD2096T114/F 2SD2096T114E
Description 3A, 60V, NPN, Si, POWER TRANSISTOR, HRT, 3 PIN Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, HRT, 3 PIN Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, HRT, 3 PIN 3A, 60V, NPN, Si, POWER TRANSISTOR, HRT, 3 PIN Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, HRT, 3 PIN trans npn 60v 3A hrt/TO-220fp
Is it lead-free? Lead free Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to conform to
package instruction IN-LINE, R-PSIP-T3 HRT, 3 PIN HRT, 3 PIN IN-LINE, R-PSIP-T3 HRT, 3 PIN HRT, 3 PIN
Contacts 3 3 3 3 3 3
Reach Compliance Code compli compli compli compli compli compli
Maximum collector current (IC) 3 A 3 A 3 A 3 A 3 A 3 A
Collector-emitter maximum voltage 60 V 60 V 60 V 60 V 60 V 60 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 160 60 100 60 160 100
JESD-30 code R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3
JESD-609 code e3/e2 e2 e2 e3/e2 e2 e3/e2
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) 260 260 260 260 260 260
Polarity/channel type NPN NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) 1.8 W 1.8 W 1.8 W 1.8 W 1.8 W 1.8 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO
Terminal surface TIN/TIN COPPER Tin/Copper (Sn/Cu) Tin/Copper (Sn/Cu) TIN/TIN COPPER Tin/Copper (Sn/Cu) TIN/TIN COPPER
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 10 10 10 10 10 10
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 8 MHz 8 MHz 8 MHz 8 MHz 8 MHz 8 MHz
Base Number Matches 1 1 1 1 1 1
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