2SD2096T114/E datasheet, PDF - EEWORLD Datasheet

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2SD2096T114/E: DescriptionPower Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, HRT, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size249KB，5 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/; Environmental Compliance

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2SD2096T114/E Overview

Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, HRT, 3 PIN

2SD2096T114/E Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
package instruction	HRT, 3 PIN
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	3 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JESD-30 code	R-PSIP-T3
JESD-609 code	e2
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power dissipation(Abs)	1.8 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Copper (Sn/Cu)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	10
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	8 MHz
VCEsat-Max	1 V
Base Number Matches	1

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Appendix

Notes

No technical content pages of this document may be reproduced in any form or transmitted by any

means without prior permission of ROHM CO.,LTD.

The contents described herein are subject to change without notice. The specifications for the

product described in this document are for reference only. Upon actual use, therefore, please request

that specifications to be separately delivered.

Application circuit diagrams and circuit constants contained herein are shown as examples of standard

use and operation. Please pay careful attention to the peripheral conditions when designing circuits

and deciding upon circuit constants in the set.

Any data, including, but not limited to application circuit diagrams information, described herein

are intended only as illustrations of such devices and not as the specifications for such devices. ROHM

CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any

third party's intellectual property rights or other proprietary rights, and further, assumes no liability of

whatsoever nature in the event of any such infringement, or arising from or connected with or related

to the use of such devices.

Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or

otherwise dispose of the same, no express or implied right or license to practice or commercially

exploit any intellectual property rights or other proprietary rights owned or controlled by

ROHM CO., LTD. is granted to any such buyer.

Products listed in this document use silicon as a basic material.

Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices

(such as audio visual equipment, office-automation equipment, communications devices, electrical

appliances and electronic toys).

Should you intend to use these products with equipment or devices which require an extremely high level of

reliability and the malfunction of with would directly endanger human life (such as medical instruments,

transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other

safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control

Order in Japan.

In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)

on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.0

2SD2096T114/E Related Products

	2SD2096T114/E	2SD2096T114/D	2SD2096T114F	2SD2096T114D	2SD2096T114/F	2SD2096T114E
Description	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, HRT, 3 PIN	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, HRT, 3 PIN	3A, 60V, NPN, Si, POWER TRANSISTOR, HRT, 3 PIN	3A, 60V, NPN, Si, POWER TRANSISTOR, HRT, 3 PIN	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, HRT, 3 PIN	trans npn 60v 3A hrt/TO-220fp
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
package instruction	HRT, 3 PIN	HRT, 3 PIN	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	HRT, 3 PIN	HRT, 3 PIN
Contacts	3	3	3	3	3	3
Reach Compliance Code	compli	compli	compli	compli	compli	compli
Maximum collector current (IC)	3 A	3 A	3 A	3 A	3 A	3 A
Collector-emitter maximum voltage	60 V	60 V	60 V	60 V	60 V	60 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	100	60	160	60	160	100
JESD-30 code	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3
JESD-609 code	e2	e2	e3/e2	e3/e2	e2	e3/e2
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	1.8 W	1.8 W	1.8 W	1.8 W	1.8 W	1.8 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO
Terminal surface	Tin/Copper (Sn/Cu)	Tin/Copper (Sn/Cu)	TIN/TIN COPPER	TIN/TIN COPPER	Tin/Copper (Sn/Cu)	TIN/TIN COPPER
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	10	10	10	10	10	10
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	8 MHz	8 MHz	8 MHz	8 MHz	8 MHz	8 MHz
Base Number Matches	1	1	1	1	1	1

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