MT48H8M16LFF4-8IT datasheet, PDF

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MT48H8M16LFF4-8IT: DescriptionSynchronous DRAM, 8MX16, 6ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, FBGA-54; Categorystorage storage; File Size3MB，63 Pages; ManufacturerMicron Technology; Websitehttp://www.mdtic.com.tw/

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MT48H8M16LFF4-8IT Overview

Synchronous DRAM, 8MX16, 6ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, FBGA-54

MT48H8M16LFF4-8IT Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Micron Technology
Parts packaging code	BGA
package instruction	8 X 8 MM, LEAD FREE, FBGA-54
Contacts	54
Reach Compliance Code	not_compliant
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	6 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	125 MHz
I/O type	COMMON
interleaved burst length	1,2,4,8
JESD-30 code	S-PBGA-B54
JESD-609 code	e0
length	8 mm
memory density	134217728 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	54
word count	8388608 words
character code	8000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	8MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	VFBGA
Encapsulate equivalent code	BGA54,9X9,32
Package shape	SQUARE
Package form	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	235
power supply	1.8 V
Certification status	Not Qualified
refresh cycle	4096
Maximum seat height	1 mm
self refresh	YES
Continuous burst length	1,2,4,8,FP
Maximum standby current	0.00001 A
Maximum slew rate	0.12 mA
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	30
width	8 mm

MT48H8M16LFF4-8IT Related Products

	MT48H8M16LFF4-8IT	MT48H8M16LFB4-8	MT48H8M16LFB4-75:K	MT48H8M16LFB4-75IT
Description	Synchronous DRAM, 8MX16, 6ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, FBGA-54	Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, VFBGA-54	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, GREEN, PLASTIC, VFBGA-54	Synchronous DRAM, 8MX16, 6ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, VFBGA-54
Is it Rohs certified?	incompatible	conform to	conform to	conform to
Maker	Micron Technology	Micron Technology	Micron Technology	Micron Technology
Parts packaging code	BGA	BGA	BGA	BGA
package instruction	8 X 8 MM, LEAD FREE, FBGA-54	VFBGA, BGA54,9X9,32	VFBGA, BGA54,9X9,32	VFBGA,
Contacts	54	54	54	54
Reach Compliance Code	not_compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	6 ns	7 ns	5.4 ns	6 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
JESD-30 code	S-PBGA-B54	S-PBGA-B54	S-PBGA-B54	S-PBGA-B54
JESD-609 code	e0	e1	e1	e1
length	8 mm	8 mm	8 mm	8 mm
memory density	134217728 bit	134217728 bit	134217728 bit	134217728 bit
Memory IC Type	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
memory width	16	16	16	16
Number of functions	1	1	1	1
Number of ports	1	1	1	1
Number of terminals	54	54	54	54
word count	8388608 words	8388608 words	8388608 words	8388608 words
character code	8000000	8000000	8000000	8000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	85 °C	70 °C	70 °C	85 °C
organize	8MX16	8MX16	8MX16	8MX16
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	VFBGA	VFBGA	VFBGA	VFBGA
Package shape	SQUARE	SQUARE	SQUARE	SQUARE
Package form	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	235	260	260	260
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1 mm	1 mm	1 mm	1 mm
self refresh	YES	YES	YES	YES
Maximum supply voltage (Vsup)	1.9 V	1.95 V	1.95 V	1.95 V
Minimum supply voltage (Vsup)	1.7 V	1.7 V	1.7 V	1.7 V
Nominal supply voltage (Vsup)	1.8 V	1.8 V	1.8 V	1.8 V
surface mount	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL	BALL	BALL	BALL
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	30	30	30	30
width	8 mm	8 mm	8 mm	8 mm
Is it lead-free?	Contains lead	-	Lead free	Lead free
Maximum clock frequency (fCLK)	125 MHz	125 MHz	133 MHz	-
I/O type	COMMON	COMMON	COMMON	-
interleaved burst length	1,2,4,8	1,2,4,8	1,2,4,8	-
Output characteristics	3-STATE	3-STATE	3-STATE	-
Encapsulate equivalent code	BGA54,9X9,32	BGA54,9X9,32	BGA54,9X9,32	-
power supply	1.8 V	1.8 V	1.8 V	-
refresh cycle	4096	4096	4096	-
Continuous burst length	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	-
Maximum standby current	0.00001 A	0.00001 A	0.0002 A	-
Maximum slew rate	0.12 mA	0.12 mA	0.07 mA	-

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