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BAW56

Description
0.25 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236
Categorysemiconductor    Discrete semiconductor   
File Size419KB,2 Pages
ManufacturerNanjing International Group Co.,Ltd
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BAW56 Overview

0.25 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236

0.25 A, 85 V, 2 组成, 硅, 信号二极管, TO-236

BAW56 Parametric

Parameter NameAttribute value
Number of terminals3
Number of components2
Processing package descriptionROHS COMPLIANT, PLASTIC PACKAGE-3
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structureCOMMON ANODE, 2 ELEMENTS
Diode component materialssilicon
Maximum power consumption limit0.3100 W
Diode typeSignal diode
Maximum reverse recovery time0.0060 us
Maximum repetitive peak reverse voltage85 V
Maximum average forward current0.2500 A

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Download Datasheet
DONGGUAN NANJING ELECTRONICS LTD.,
SOT-23 Plastic-Encapsulate Diodes
BAW56/BAV70/BAV99
SOT-23
SWITCHING DIODE
FEATURES
Fast Switching Speed
For General Purpose Switching Applications
High Conductance
BAW56 Marking: A1
BAV70 Marking: A4
BAV99 Marking: A7
Maximum Ratings @Ta=25℃
Parameter
Reverse Voltage
Forward Current
Peak Forward Surge Current
Power Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature range
Symbol
V
R
I
F
I
FM(surge)
P
D
R
θJA
T
J
T
STG
Limit
70
200
500
225
556
150
-55~+150
Unit
V
mA
mA
mW
℃/W
Electrical Characteristics @Ta=25℃
Parameter
Reverse breakdown voltage
Symbol
V
R
V
F1
Forward voltage
V
F2
V
F3
V
F4
Reverse current
Capacitance between terminals
Reverse recovery time
I
R
C
T
t
rr
Min
70
0.715
0.855
1
1.25
2.5
1.5
6
Typ
Max
Unit
V
V
V
V
V
μA
pF
ns
Conditions
I
R
=100μA
I
F
=1mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=70V
V
R
=0,f=1MHz
I
F
= I
R
= 10mA,
Irr= 0.1 x I
R
, R
L
= 100Ω
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