PZT3904T1G datasheet, PDF - EEWORLD Datasheet

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PZT3904T1G: DescriptionRated power: 1.5W Collector current Ic: 200mA Collector-emitter breakdown voltage Vce: 40V Transistor type: NPN; CategoryDiscrete semiconductor The transistor; File Size134KB，7 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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PZT3904T1G Overview

Rated power: 1.5W Collector current Ic: 200mA Collector-emitter breakdown voltage Vce: 40V Transistor type: NPN

PZT3904T1G Parametric

Parameter Name	Attribute value
Brand Name	ON Semiconductor
Is it lead-free?	Lead free
Maker	ON Semiconductor
Parts packaging code	TO-261AA
package instruction	SMALL OUTLINE, R-PDSO-G4
Contacts	4
Manufacturer packaging code	0.0318
Reach Compliance Code	compliant
ECCN code	EAR99
Factory Lead Time	8 weeks
Samacsys Confidence	3
Samacsys Status	Released
Samacsys PartID	413125
Samacsys Pin Count	4
Samacsys Part Category	Transistor BJT NPN
Samacsys Package Category	SOT223 (3-Pin)
Samacsys Footprint Name	PZT3904T1G
Samacsys Released Date	2019-05-20 13:16:37
Is Samacsys	N
Shell connection	COLLECTOR
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	40 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
JEDEC-95 code	TO-261AA
JESD-30 code	R-PDSO-G4
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.3 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
Transistor component materials	SILICON
Nominal transition frequency (fT)	300 MHz
Maximum off time (toff)	250 ns
Maximum opening time (tons)	70 ns
Base Number Matches	1

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PZT3904T1G

General Purpose Transistor

NPN Silicon

Features

•

S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

•

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating

Collector −Emitter Voltage

Collector −Base Voltage

Emitter −Base Voltage

Collector Current − Continuous

Symbol

CEO

CBO

EBO

Value

6.0

200

Unit

Vdc

http://onsemi.com

COLLECTOR

2, 4

BASE

EMITTER

Vdc

mAdc

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

SOT−223

CASE 318E

STYLE 1

THERMAL CHARACTERISTICS

Characteristic

Total Device Dissipation (Note 1)

= 25°C

Thermal Resistance

Junction−to−Ambient (Note 1)

Thermal Resistance

Junction−to−Lead #4

Junction and Storage Temperature

Range

Symbol

qJA

, T

stg

Max

1.5

83.3

°C/W

−55 to +150

°C

Unit

mW/°C

°C/W

MARKING DIAGRAM

AYW

1AM

1. FR−4 with 1 oz and 713 mm

of copper area.

1AM

= Specific Device Code

= Assembly Location

= Year

= Work Week

= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

Device

PZT3904T1G

SPZT3904T1G

Package

SOT−223

(Pb−Free)

SOT−223

(Pb−Free)

Shipping

†

1,000 / Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2013

September, 2013 − Rev. 6

Publication Order Number:

PZT3904T1/D

PZT3904T1G Related Products

	PZT3904T1G	PZT3904
Description	Rated power: 1.5W Collector current Ic: 200mA Collector-emitter breakdown voltage Vce: 40V Transistor type: NPN	Rated power: 1W Collector current Ic: 200mA Collector-emitter breakdown voltage Vce: 40V Transistor type: NPN -
Brand Name	ON Semiconductor	ON Semiconductor
Is it lead-free?	Lead free	Lead free
Maker	ON Semiconductor	ON Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Manufacturer packaging code	0.0318	318H-01
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Factory Lead Time	8 weeks	1 week
Samacsys Confidence	3	3
Samacsys Status	Released	Released
Samacsys PartID	413125	971110
Samacsys Pin Count	4	4
Samacsys Part Category	Transistor BJT NPN	Transistor BJT NPN
Samacsys Package Category	SOT223 (3-Pin)	SOT223 (3-Pin)
Samacsys Footprint Name	PZT3904T1G	PZT3904
Samacsys Released Date	2019-05-20 13:16:37	2019-02-15 04:39:48
Is Samacsys	N	N
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	0.2 A	0.2 A
Collector-emitter maximum voltage	40 V	40 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	30	30
JESD-30 code	R-PDSO-G4	R-PDSO-G4
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	4	4
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	NOT SPECIFIED
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	0.3 W	1.5 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	Tin (Sn)	Tin (Sn)
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	40	NOT SPECIFIED
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	300 MHz	300 MHz
Maximum off time (toff)	250 ns	250 ns
Maximum opening time (tons)	70 ns	70 ns
Base Number Matches	1	1

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