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S1227-1010BR

Description
Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity
CategoryLED optoelectronic/LED    photoelectric   
File Size141KB,4 Pages
ManufacturerHamamatsu
Websitehttp://www.hamamatsu.com
Environmental Compliance
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S1227-1010BR Overview

Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity

S1227-1010BR Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerHamamatsu
Reach Compliance Codeunknow
ConfigurationSINGLE
Maximum dark power0.05 nA
Infrared rangeNO
Nominal photocurrent0.053 mA
Installation featuresTHROUGH HOLE MOUNT
Number of functions1
Maximum operating temperature60 °C
Minimum operating temperature-20 °C
peak wavelength720 nm
Maximum response time0.000009 s
Minimum reverse breakdown voltage5 V
Maximum reverse voltage5 V
Semiconductor materialSilic
shapeSQUARE
size10 mm
surface mountNO

S1227-1010BR Related Products

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Description Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Optoelectronic Device Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity
Is it Rohs certified? conform to - - conform to - conform to conform to conform to conform to
Maker Hamamatsu - Hamamatsu Hamamatsu - Hamamatsu Hamamatsu Hamamatsu Hamamatsu
Reach Compliance Code unknow - unknow unknow - unknow unknow unknow unknow
Configuration SINGLE - SINGLE SINGLE - SINGLE SINGLE SINGLE SINGLE
Maximum dark power 0.05 nA - 0.005 nA 0.005 nA - 0.02 nA 0.02 nA 0.005 nA 0.05 nA
Infrared range NO - NO NO - NO NO NO NO
Nominal photocurrent 0.053 mA - 0.0032 mA 0.003 mA - 0.019 mA 0.016 mA 0.0037 mA 0.044 mA
Installation features THROUGH HOLE MOUNT - THROUGH HOLE MOUNT THROUGH HOLE MOUNT - THROUGH HOLE MOUNT THROUGH HOLE MOUNT THROUGH HOLE MOUNT THROUGH HOLE MOUNT
Number of functions 1 - 1 1 - 1 1 1 1
Maximum operating temperature 60 °C - 60 °C 60 °C - 60 °C 60 °C 60 °C 60 °C
Minimum operating temperature -20 °C - -20 °C -20 °C - -20 °C -20 °C -20 °C -20 °C
peak wavelength 720 nm - 720 nm 720 nm - 720 nm 720 nm 720 nm 720 nm
Maximum response time 0.000009 s - 5e-7 s 5e-7 s - 0.000003 s 0.000003 s 5e-7 s 0.000009 s
Minimum reverse breakdown voltage 5 V - 5 V 5 V - 5 V 5 V 5 V 5 V
Maximum reverse voltage 5 V - 5 V 5 V - 5 V 5 V 5 V 5 V
Semiconductor material Silic - Silic Silic - Silic Silic Silic Silic
shape SQUARE - RECTANGULAR SQUARE - SQUARE SQUARE SQUARE SQUARE
size 10 mm - 5.9 mm 2.4 mm - 5.8 mm 5.8 mm 2.4 mm 10 mm
surface mount NO - NO NO - NO NO NO NO
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