Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | Hamamatsu |
| Reach Compliance Code | unknow |
| Configuration | SINGLE |
| Maximum dark power | 0.02 nA |
| Infrared range | NO |
| Nominal photocurrent | 0.016 mA |
| Installation features | THROUGH HOLE MOUNT |
| Number of functions | 1 |
| Maximum operating temperature | 60 °C |
| Minimum operating temperature | -20 °C |
| peak wavelength | 720 nm |
| Maximum response time | 0.000003 s |
| Minimum reverse breakdown voltage | 5 V |
| Maximum reverse voltage | 5 V |
| Semiconductor material | Silic |
| shape | SQUARE |
| size | 5.8 mm |
| surface mount | NO |
| S1227-66BQ | S1227 | S1227-16BQ | S1227-33BQ | S1227-16BR | S1227-66BR | S1227-1010BR | S1227-33BR | S1227-1010BQ | |
|---|---|---|---|---|---|---|---|---|---|
| Description | Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity | Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity | Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity | Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity | Optoelectronic Device | Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity | Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity | Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity | Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity |
| Is it Rohs certified? | conform to | - | - | conform to | - | conform to | conform to | conform to | conform to |
| Maker | Hamamatsu | - | Hamamatsu | Hamamatsu | - | Hamamatsu | Hamamatsu | Hamamatsu | Hamamatsu |
| Reach Compliance Code | unknow | - | unknow | unknow | - | unknow | unknow | unknow | unknow |
| Configuration | SINGLE | - | SINGLE | SINGLE | - | SINGLE | SINGLE | SINGLE | SINGLE |
| Maximum dark power | 0.02 nA | - | 0.005 nA | 0.005 nA | - | 0.02 nA | 0.05 nA | 0.005 nA | 0.05 nA |
| Infrared range | NO | - | NO | NO | - | NO | NO | NO | NO |
| Nominal photocurrent | 0.016 mA | - | 0.0032 mA | 0.003 mA | - | 0.019 mA | 0.053 mA | 0.0037 mA | 0.044 mA |
| Installation features | THROUGH HOLE MOUNT | - | THROUGH HOLE MOUNT | THROUGH HOLE MOUNT | - | THROUGH HOLE MOUNT | THROUGH HOLE MOUNT | THROUGH HOLE MOUNT | THROUGH HOLE MOUNT |
| Number of functions | 1 | - | 1 | 1 | - | 1 | 1 | 1 | 1 |
| Maximum operating temperature | 60 °C | - | 60 °C | 60 °C | - | 60 °C | 60 °C | 60 °C | 60 °C |
| Minimum operating temperature | -20 °C | - | -20 °C | -20 °C | - | -20 °C | -20 °C | -20 °C | -20 °C |
| peak wavelength | 720 nm | - | 720 nm | 720 nm | - | 720 nm | 720 nm | 720 nm | 720 nm |
| Maximum response time | 0.000003 s | - | 5e-7 s | 5e-7 s | - | 0.000003 s | 0.000009 s | 5e-7 s | 0.000009 s |
| Minimum reverse breakdown voltage | 5 V | - | 5 V | 5 V | - | 5 V | 5 V | 5 V | 5 V |
| Maximum reverse voltage | 5 V | - | 5 V | 5 V | - | 5 V | 5 V | 5 V | 5 V |
| Semiconductor material | Silic | - | Silic | Silic | - | Silic | Silic | Silic | Silic |
| shape | SQUARE | - | RECTANGULAR | SQUARE | - | SQUARE | SQUARE | SQUARE | SQUARE |
| size | 5.8 mm | - | 5.9 mm | 2.4 mm | - | 5.8 mm | 10 mm | 2.4 mm | 10 mm |
| surface mount | NO | - | NO | NO | - | NO | NO | NO | NO |
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