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2SK3767(Q)

Description
MOSFET N-Ch 600V 2A Rdson 4.5 Ohm
CategoryDiscrete semiconductor    The transistor   
File Size211KB,7 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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2SK3767(Q) Overview

MOSFET N-Ch 600V 2A Rdson 4.5 Ohm

2SK3767(Q) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codeunknown
Base Number Matches1
2SK3767
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3767
Switching Regulator Applications
Low drain-source ON resistance: R
DS (ON)
= 3.3
(typ.)
High forward transfer admittance: |Y
fs
| = 1.6 S (typ.)
Low leakage current: I
DSS
= 100
μA
(V
DS
= 600 V)
Enhancement mode: V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
600
600
±30
2
5
25
93
2
4
150
-55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
Drain power dissipation (Tc
=
25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
SC-67
2-10U1B
Weight : 1.7 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
5.0
62.5
Unit
°C/W
°C/W
1
2
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
=
90 V, T
ch
=
25°C (initial), L
=
41mH, R
G
=
25
Ω
, I
AR
=
2 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
3
Start of commercial production
2003-07
1
2013-11-01
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