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UF1008FCT

Description
10 A, 800 V, SILICON, RECTIFIER DIODE, TO-220AB
CategoryDiscrete semiconductor    diode   
File Size41KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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UF1008FCT Overview

10 A, 800 V, SILICON, RECTIFIER DIODE, TO-220AB

UF1008FCT Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
Reach Compliance Code_compli
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.7 V
Maximum non-repetitive peak forward current125 A
Maximum operating temperature150 °C
Maximum output current10 A
Maximum repetitive peak reverse voltage800 V
Maximum reverse recovery time0.1 µs
surface mountNO

UF1008FCT Preview

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DATA SHEET
UF1000FCT~UF1008FCT
ULTRAFAST RECOVERY RECTIFIERS
VOLTAGE
FEATURES
.112(2.85)
.100(2.55)
.272(6.9)
.248(6.3)
50 to 800 Volts
CURRENT
10.0 Amperes
ITO-220AB
Unit : inch (mm)
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of
MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• Ultra fast recovery time, high voltage.
• Both normal and Pb free product are available :
Normal : 80~95% Sn, 5~20% Pb
Pb free: 98.5% Sn above
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
.189(4.8)
.165(4.2)
.130(3.3)
.114(2.9)
.606(15.4)
.583(14.8)
MECHANCALDATA
Case: ITO-220AB full molded plastic package
Terminals: Lead solderable per MIL-STD-202, Method 208
Polarity: As marked.
Standard packaging: Any
Weight: 0.08 ounces, 2.24grams.
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.1
(2.55)
.1
(2.55)
.161(4.1)MAX
.543(13.8)
.512(13.0)
.071(1.8)
.055(1.4)
.114(2.9)
.098(2.5)
.032(.8)
MAX
AC
Positive CT
AC
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
P A R A M E TE R
M a xim um R e curre nt P e a k R e ve rse V o l a g e
t
M a xim um R M S V o l a g e
t
M a xim um D C B l cking V o l a g e
o
t
M a xim um A ve ra g e F o rw a rd C urre nt a t T c = 1 0 0
O
C
P e a k F o rw a rd S urg e C urre nt :8 .3 m s sing l ha l sine -
e
f
w a ve sup e rim p o se d o n ra te d l a d (JE D E C m e tho d )
o
M a xim um F o rw a rd V o l a g e a t 5 .0 A
t
M a xim um D C R e ve rse C urre nt T
A
= 2 5
O
C
a t R a te d D C B l cking V o l a g e T
A
= 1 2 5
O
C
o
t
Typ ica l Junctio n C a p a cita nce (N o te 1 )
M a xim um R e ve rse R e co ve ry Tim e (N o te 2 )
Typ ica l T he rm a l R e sista nce (N o te 3 )
O p e ra ting Junctio n a nd S to ra g e Te m p e ra ture R a ng e
S YM B O L U F 1000F C T U F 1001F C T U F 1002F C T U F 1003F C T U F 1004F C T U F 1006F C T U F 1008F C T U N I S
T
V
RRM
V
RM S
V
DC
I
V
A
F
I
SM
50
35
50
100
70
100
200
140
200
300
210
300
10
125
400
280
400
600
420
600
800
560
800
V
V
V
A
A
V
F
1 .0
10
500
80
50
2
1 .3 0
1 .7 0
V
R
I
uA
C
J
T
R R
R
θ
JC
T
J
,T
S TG
50
100
O
pF
ns
C /W
O
-5 0 to + 1 5 0
C
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Reverse Recovery Test Conditions: I
F
=.5A, I
R
=1A, Irr=.25A.
3. Thermal resistance from Junction to case.
4. Both Bonding and Chip structure are available.
STAD-MAR.12.2004
PAGE . 1
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