TB4S datasheet, PDF - EEWORLD Datasheet

TB4S: DescriptionBridge bridge; CategoryDiscrete semiconductor diode; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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TB4S Overview

Bridge bridge

Features

Product name: Bridge

Product model: TB4S

Product parameters:

Peak Repetitive Reverse Voltage: VRRM: 400V

Max. Average Rectified Current: IO: 1A

Max. Peak Forward Surge Current: IFSM: 30A

Forward Voltage Drop: VF@IF: 1V@1A

Max. Reverse Current: IR@VR: 10μA@400V

Package: MICRO DIP/TDI

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
Parts packaging code	DIP
package instruction	R-PDSO-G4
Contacts	4
Reach Compliance Code	compli
ECCN code	EAR99
Other features	UL RECOGNIZED
Minimum breakdown voltage	400 V
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
JESD-30 code	R-PDSO-G4
Maximum non-repetitive peak forward current	30 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	400 V
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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