Microelectronics Technology (Harbin Institute of Technology)

This course is a core course for majors such as "Electronic Information Science and Technology" and "Microelectronics Science and Engineering". It comprehensively and systematically introduces the basic knowledge of microelectronics technology, focusing on individual chip manufacturing processes, including: epitaxy, thermal oxidation, diffusion, ion implantation, chemical vapor deposition, physical vapor deposition, photolithography, and etching. Metal interconnections, typical process integration, key process equipment, and future development trends of microelectronics processes are also introduced. Through the study of this course, students can have a comprehensive understanding of microelectronics process technology and lay a solid foundation for subsequent professional courses. It is also conducive to the improvement of students' professional quality.

The characteristic of this course is that it explains the basic physical and chemical knowledge on which key processes rely, and also introduces the key process parameter testing technology through experimental videos.

Enable learners to master the basic principles, methods, and uses of key microelectronic processes; become familiar with the main process equipment and testing instruments; and understand the manufacturing process of typical integrated circuit chips.

• Chapter 1：Introduction: What is microelectronics technology about? (5 minutes and 0 seconds)

• Chapter 2：What is the development history of microelectronics technology? (7 minutes and 16 seconds)

• Chapter 3：What are the characteristics of microelectronics technology? (5 minutes and 37 seconds)

• Chapter 4：Characteristics of Monocrystalline Silicon (Part 1) (8 minutes and 55 seconds)

• Chapter 5：Monocrystalline silicon properties (middle) (6 minutes and 20 seconds)

• Chapter 6：Characteristics of Monocrystalline Silicon (Part 2) (7 minutes and 48 seconds)

• Chapter 7：Preparation of polycrystalline silicon; 1.2 Single crystal growth-CZ method (6 minutes and 57 seconds)

• Chapter 8：Single crystal growth-principle (5 minutes and 0 seconds)

• Chapter 9：Single crystal growth-doping (9 minutes and 30 seconds)

• Chapter 10：Single crystal growth-MCZ and FZ method (6 minutes and 35 seconds)

• Chapter 11：Silicon wafer processing (5 minutes and 20 seconds)

• Chapter 12：Silicon wafer introduction (1 minutes and 45 seconds)

• Chapter 13：Overview of extension (7 minutes and 7 seconds)

• Chapter 14：Vapor phase epitaxy-1 silicon process (6 minutes and 51 seconds)

• Chapter 15：Vapor phase epitaxy-2 principles (6 minutes and 20 seconds)

• Chapter 16：Vapor Phase Epitaxy-3 Rate (7 minutes and 40 seconds)

• Chapter 17：Vapor phase epitaxy-4 doping (7 minutes and 26 seconds)

• Chapter 18：Vapor Phase Epitaxy-5 Equipment and Technology (6 minutes and 39 seconds)

• Chapter 19：molecular beam epitaxy (5 minutes and 41 seconds)

• Chapter 20：Other epitaxy methods (10 minutes and 10 seconds)

• Chapter 21：Epitaxial layer defects and detection (7 minutes and 43 seconds)

• Chapter 22：Resistivity measurement (1 minutes and 56 seconds)

• Chapter 23：Overview-1 Properties and uses (4 minutes and 30 seconds)

• Chapter 24：Overview-2 Impurities and Masking (5 minutes and 5 seconds)

• Chapter 25：Silicon thermal oxidation-1 process (6 minutes and 3 seconds)

• Chapter 26：Thermal oxidation of silicon-2 mechanism (2 minutes and 19 seconds)

• Chapter 27：Thermal oxidation of silicon-3DG model (4 minutes and 20 seconds)

• Chapter 28：Thermal Oxidation of Silicon-4 Rate (4 minutes and 16 seconds)

• Chapter 29：Silicon thermal oxidation-5 influencing factors (5 minutes and 32 seconds)

• Chapter 30：initial oxidation (2 minutes and 58 seconds)

• Chapter 31：Impurity Redistribution-1 Fractional Condensation (4 minutes and 47 seconds)

• Chapter 32：Impurity Redistribution-2 Silicon Surface Concentration (3 minutes and 0 seconds)

• Chapter 33：Oxide layer detection-1 thickness (4 minutes and 2 seconds)

• Chapter 34：Oxide layer detection-2 Film formation quality (5 minutes and 8 seconds)

• Chapter 35：Oxide layer thickness estimation experiment (3 minutes and 10 seconds)

• Chapter 36：Other oxidation methods (3 minutes and 23 seconds)

• Chapter 37：diffusion agency (5 minutes and 56 seconds)

• Chapter 38：Diffusion Equation-1 Fick’s Law (4 minutes and 0 seconds)

• Chapter 39：Diffusion Equation-2 Diffusion Coefficient (4 minutes and 43 seconds)

• Chapter 40：Diffused doping-1 constant source (3 minutes and 53 seconds)

• Chapter 41：Diffused Doping-2 Defined Source (5 minutes and 40 seconds)

• Chapter 42：Factors affecting impurity distribution-1 point defect (3 minutes and 47 seconds)

• Chapter 43：Factors affecting impurity distribution-2 Oxidation enhancement (3 minutes and 15 seconds)

• Chapter 44：Factors Affecting Impurity Distribution-3 Emission Zone Advancement (3 minutes and 47 seconds)

• Chapter 45：Diffusion conditions and methods-1 method selection (6 minutes and 13 seconds)

• Chapter 46：Diffusion conditions and methods-2 Diffusion process (5 minutes and 56 seconds)

• Chapter 47：Quality Inspection and Measurement-1 Junction Depth (3 minutes and 48 seconds)

• Chapter 48：Quality Inspection and Measurement-2 Surface Concentration (6 minutes and 21 seconds)

• Chapter 49：PN junction depth measurement experiment (3 minutes and 6 seconds)

• Chapter 50：Development of Diffusion Processes (2 minutes and 29 seconds)

• Chapter 51：Ion Implantation Overview (3 minutes and 21 seconds)

• Chapter 52：Ion implantation principle-1 (2 minutes and 15 seconds)

• Chapter 53：Ion implantation principle-2 (5 minutes and 35 seconds)

• Chapter 54：Ion implantation principle-3 (4 minutes and 2 seconds)

• Chapter 55：Implanted ion distribution-1,2 distribution (5 minutes and 34 seconds)

• Chapter 56：Implanted ion distribution-3 channel effect (6 minutes and 15 seconds)

• Chapter 57：Implanted ion distribution-4 other effects (2 minutes and 55 seconds)

• Chapter 58：Injection damage -1 (2 minutes and 58 seconds)

• Chapter 59：Injection damage -2 (3 minutes and 22 seconds)

• Chapter 60：Annealing-1 thermal annealing (6 minutes and 16 seconds)

• Chapter 61：Annealing-2 Rapid Annealing (5 minutes and 10 seconds)

• Chapter 62：Equipment and processes (6 minutes and 44 seconds)

• Chapter 63：application (5 minutes and 41 seconds)

• Chapter 64：Doping new technology (5 minutes and 27 seconds)

• Chapter 65：CVD Overview (4 minutes and 50 seconds)

• Chapter 66：CVD Principle-1 Process (4 minutes and 4 seconds)

• Chapter 67：CVD Principle-2 Rate (8 minutes and 25 seconds)

• Chapter 68：CVD Principle-3 Quality (8 minutes and 30 seconds)

• Chapter 69：CVD process method-1AP-2LP (5 minutes and 46 seconds)

• Chapter 70：CVD process method-3 plasma (Part 1) (7 minutes and 36 seconds)

• Chapter 71：CVD process method-3 plasma (Part 2) (3 minutes and 38 seconds)

• Chapter 72：CVD process method-4PE-5HDP (new) (12 minutes and 54 seconds)

• Chapter 73：Silica film-1 Properties (7 minutes and 13 seconds)

• Chapter 74：Silica film-2 preparation (4 minutes and 6 seconds)

• Chapter 75：silicon nitride film (8 minutes and 20 seconds)

• Chapter 76：polycrystalline silicon film (7 minutes and 8 seconds)

• Chapter 77：CVD metal and metal compound films (8 minutes and 10 seconds)

• Chapter 78：PVD-1 Overview (3 minutes and 55 seconds)

• Chapter 79：PVD-1 vacuum introduction (3 minutes and 6 seconds)

• Chapter 80：Obtaining PVD-2 vacuum (6 minutes and 34 seconds)

• Chapter 81：Evaporation-1 principle (6 minutes and 23 seconds)

• Chapter 82：Evaporation-2 equipment and processes (7 minutes and 6 seconds)

• Chapter 83：Evaporation-3 quality (4 minutes and 55 seconds)

• Chapter 84：Sputtering-1 principle (5 minutes and 31 seconds)

• Chapter 85：Sputter-2 method (7 minutes and 1 seconds)

• Chapter 86：Sputter-3 quality (5 minutes and 10 seconds)

• Chapter 87：PVD metal and compound films (9 minutes and 48 seconds)

• Chapter 88：Lithography 02--Lithography technology (15 minutes and 34 seconds)

• Chapter 89：Photolithography mask manufacturing technology (12 minutes and 3 seconds)

• Chapter 90：Photolithography--photoresist (12 minutes and 0 seconds)

• Chapter 91：Photolithography--UV exposure technology (7 minutes and 41 seconds)

• Chapter 92：Lithography--Lithography enhancement technology (12 minutes and 58 seconds)

• Chapter 93：Other exposure techniques (4 minutes and 12 seconds)

• Chapter 94：Other exposure techniques(2) (8 minutes and 44 seconds)

• Chapter 95：Prospects for new photolithography technologies (6 minutes and 34 seconds)

• Chapter 96：Introduction to Lithography (49 seconds)

• Chapter 97：Photolithography process (4 minutes and 21 seconds)

• Chapter 98：Lithographic resolution (3 minutes and 28 seconds)

• Chapter 99：Lithography resolution--2 (4 minutes and 8 seconds)

• Chapter 100：Etching Technology--Overview (9 minutes and 54 seconds)

• Chapter 101：Wet etching technology (17 minutes and 42 seconds)

• Chapter 102：Etching technology-dry etching technology (12 minutes and 36 seconds)

• Chapter 103：Etching technology-dry etching technology of SiO2 thin film (10 minutes and 57 seconds)

• Chapter 104：Etching technology-dry etching technology for polysilicon and other thin films (9 minutes and 24 seconds)

• Chapter 105：Process Integration--Metalization and Multi-Level Interconnect (12 minutes and 15 seconds)

• Chapter 106：Process Integration--The Sharp Wedge Phenomenon of Metallization (11 minutes and 52 seconds)

• Chapter 107：Process Integration--Isolation Technology in Integrated Circuits (16 minutes and 33 seconds)

• Chapter 108：Process integration of CMOS integrated circuits (13 minutes and 55 seconds)

• Chapter 109：Process integration of bipolar integrated circuits (7 minutes and 51 seconds)

• Chapter 110：Conclusion My Chinese Core (1 minutes and 19 seconds)