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Datasheet > Manufacturers> BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD.

BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD.

BORNSEMI (Shenzhen) Co., Ltd. (BORNSEMI) is a semiconductor company with independent R&D, design, production and sales as its main body. It is a high-tech enterprise specializing in wafer design, R&D, production and sales of protection devices and power devices. It is one of the international suppliers that master the core technology of semiconductor overvoltage protection devices and protection integrated circuits. BORN focuses on the development and sales of high-quality, high-performance analog integrated circuits and power devices, and always plans, develops and produces with the goal of world-class electronic technology. The company's products include: protection devices (TVS, ESD, TSS) power devices (MOS, SKY, DIODE, TRANSISTOR), driver ICs, interface chips, etc. BORN has a production base in Tianjin (a joint venture with the Institute of Microelectronics of the Chinese Academy of Sciences) and a production base in Henan (wafer manufacturing and packaging and testing). From wafer design, tape-out to packaging and testing, BORN strives for high reliability of product quality and creates a closed loop of the entire industry chain. In order to form two major system products, power and protection, the quality has reached the international advanced level, especially our company's low-capacitance series of semiconductor protection devices, which have independent intellectual property rights and patent systems. As an industry leader in the field of overcurrent and overvoltage devices, our products are an indispensable component of almost all products that use electrical energy, including: automotive electronic systems, traffic signals, equipment communication terminals, communication equipment, household and industrial electrical appliances, electricity, power supply equipment, and electronic circuit protection at the power input end.

Part Number Manufacturer Description Datasheet
ESD9B5.0ST5G-N BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Bidirectional Peak pulse current (10/1000us): 5A (8/20us) Cl ... Download
PESD5V0V1BA-N BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Reverse shutdown voltage (typ): 5V Breakdown voltage (minimum): 6V Pol ... Download
BST23A052V BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Unidirectional Peak pulse current (10/1000us): 18A (8/20us) ... Download
PESD5V0L2BTN BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Bidirectional Peak pulse current (10/1000us): 17A (8/20us) C ... Download
BZT52C8V2 BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Accuracy: - Voltage regulation value (typical value): 8.2V Reverse lea ... Download
SI2301 BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25 ... Download
BDFN1C031V BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Reverse shutdown voltage (typ.): 3.3V Breakdown voltage (min.): 3.4V P ... Download
ES1D BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. DC reverse withstand voltage (Vr): 200V Average rectified current (Io) ... Download
BDFN1C051L BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Bidirectional Peak pulse current (10/1000us): 3A (8/20us) Cl ... Download
MB10F BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Average rectifier current (Io): 500mA/800mA Forward voltage drop (Vf): ... Download
BAT54A BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. DC reverse withstand voltage (Vr): 30V Average rectified current (Io): ... Download
SMAJ6.0A BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Unidirectional Peak pulse current (10/1000us): 38.8A Clampin ... Download
SMFJ15CA BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Bidirectional Peak pulse current (10/1000us): 8.2A Clamping ... Download
SMAJ15A BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Unidirectional Peak pulse current (10/1000us): 16.4A Clampin ... Download
1N4148WS-2 BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Reverse recovery time (trr): 4ns DC reverse withstand voltage (Vr): 71 ... Download
SS26 BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. DC reverse withstand voltage (Vr): 60V Average rectified current (Io): ... Download
BESDU0402-14 BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Bidirectional Peak pulse current (10/1000us): - Clamping vol ... Download
SMAJ5.0CA BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Bidirectional Peak pulse current (10/1000us): 43.5A Clamping ... Download
0402ESDA-24N BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Bidirectional Peak pulse current (10/1000us): - Clamping vol ... Download
PESD5V0F1BSF-N BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. VRWM=5V Bipolar Download
BSD9C051V BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Bidirectional Peak pulse current (10/1000us): 5A (8/20us) Cl ... Download
SMBJ12CA BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Bidirectional Peak pulse current (10/1000us): 30.2A Clamping ... Download
Rclamp0531T-N BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Reverse shutdown voltage (typ): 5V Breakdown voltage (minimum): 6V Pol ... Download
BDFN2C051V40 BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Bidirectional Peak pulse current (10/1000us): 1A (8/20us) Cl ... Download
SS8550 BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Rated power: 300mW Collector current Ic: 1.5A Collector-emitter breakd ... Download
BZT52C5V6S BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Accuracy: - Voltage regulation value (typical value): 5.6V Reverse lea ... Download
PESD3V3S2UT-N BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Bidirectional / Unidirectional Peak pulse current (10/1000us ... Download
BZT52C30 BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Accuracy: - Voltage regulation value (typical value): 30V Reverse leak ... Download
SS210 BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. DC reverse withstand voltage (Vr): 100V Average rectified current (Io) ... Download
SMBJ33A BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Unidirectional Peak pulse current (10/1000us): 11.3A Clampin ... Download

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