BORNSEMI (Shenzhen) Co., Ltd. (BORNSEMI) is a semiconductor company with independent R&D, design, production and sales as its main body. It is a high-tech enterprise specializing in wafer design, R&D, production and sales of protection devices and power devices. It is one of the international suppliers that master the core technology of semiconductor overvoltage protection devices and protection integrated circuits. BORN focuses on the development and sales of high-quality, high-performance analog integrated circuits and power devices, and always plans, develops and produces with the goal of world-class electronic technology. The company's products include: protection devices (TVS, ESD, TSS) power devices (MOS, SKY, DIODE, TRANSISTOR), driver ICs, interface chips, etc. BORN has a production base in Tianjin (a joint venture with the Institute of Microelectronics of the Chinese Academy of Sciences) and a production base in Henan (wafer manufacturing and packaging and testing). From wafer design, tape-out to packaging and testing, BORN strives for high reliability of product quality and creates a closed loop of the entire industry chain. In order to form two major system products, power and protection, the quality has reached the international advanced level, especially our company's low-capacitance series of semiconductor protection devices, which have independent intellectual property rights and patent systems. As an industry leader in the field of overcurrent and overvoltage devices, our products are an indispensable component of almost all products that use electrical energy, including: automotive electronic systems, traffic signals, equipment communication terminals, communication equipment, household and industrial electrical appliances, electricity, power supply equipment, and electronic circuit protection at the power input end.
Part Number | Manufacturer | Description | Datasheet |
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ESD9B5.0ST5G-N | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Polarity: Bidirectional Peak pulse current (10/1000us): 5A (8/20us) Cl ... | Download |
PESD5V0V1BA-N | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Reverse shutdown voltage (typ): 5V Breakdown voltage (minimum): 6V Pol ... | Download |
BST23A052V | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Polarity: Unidirectional Peak pulse current (10/1000us): 18A (8/20us) ... | Download |
PESD5V0L2BTN | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Polarity: Bidirectional Peak pulse current (10/1000us): 17A (8/20us) C ... | Download |
BZT52C8V2 | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Accuracy: - Voltage regulation value (typical value): 8.2V Reverse lea ... | Download |
SI2301 | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25 ... | Download |
BDFN1C031V | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Reverse shutdown voltage (typ.): 3.3V Breakdown voltage (min.): 3.4V P ... | Download |
ES1D | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | DC reverse withstand voltage (Vr): 200V Average rectified current (Io) ... | Download |
BDFN1C051L | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Polarity: Bidirectional Peak pulse current (10/1000us): 3A (8/20us) Cl ... | Download |
MB10F | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Average rectifier current (Io): 500mA/800mA Forward voltage drop (Vf): ... | Download |
BAT54A | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | DC reverse withstand voltage (Vr): 30V Average rectified current (Io): ... | Download |
SMAJ6.0A | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Polarity: Unidirectional Peak pulse current (10/1000us): 38.8A Clampin ... | Download |
SMFJ15CA | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Polarity: Bidirectional Peak pulse current (10/1000us): 8.2A Clamping ... | Download |
SMAJ15A | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Polarity: Unidirectional Peak pulse current (10/1000us): 16.4A Clampin ... | Download |
1N4148WS-2 | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Reverse recovery time (trr): 4ns DC reverse withstand voltage (Vr): 71 ... | Download |
SS26 | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | DC reverse withstand voltage (Vr): 60V Average rectified current (Io): ... | Download |
BESDU0402-14 | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Polarity: Bidirectional Peak pulse current (10/1000us): - Clamping vol ... | Download |
SMAJ5.0CA | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Polarity: Bidirectional Peak pulse current (10/1000us): 43.5A Clamping ... | Download |
0402ESDA-24N | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Polarity: Bidirectional Peak pulse current (10/1000us): - Clamping vol ... | Download |
PESD5V0F1BSF-N | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | VRWM=5V Bipolar | Download |
BSD9C051V | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Polarity: Bidirectional Peak pulse current (10/1000us): 5A (8/20us) Cl ... | Download |
SMBJ12CA | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Polarity: Bidirectional Peak pulse current (10/1000us): 30.2A Clamping ... | Download |
Rclamp0531T-N | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Reverse shutdown voltage (typ): 5V Breakdown voltage (minimum): 6V Pol ... | Download |
BDFN2C051V40 | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Polarity: Bidirectional Peak pulse current (10/1000us): 1A (8/20us) Cl ... | Download |
SS8550 | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Rated power: 300mW Collector current Ic: 1.5A Collector-emitter breakd ... | Download |
BZT52C5V6S | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Accuracy: - Voltage regulation value (typical value): 5.6V Reverse lea ... | Download |
PESD3V3S2UT-N | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Polarity: Bidirectional / Unidirectional Peak pulse current (10/1000us ... | Download |
BZT52C30 | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Accuracy: - Voltage regulation value (typical value): 30V Reverse leak ... | Download |
SS210 | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | DC reverse withstand voltage (Vr): 100V Average rectified current (Io) ... | Download |
SMBJ33A | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Polarity: Unidirectional Peak pulse current (10/1000us): 11.3A Clampin ... | Download |