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Datasheet > Manufacturers> BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD.

BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD.

BORNSEMI (Shenzhen) Co., Ltd. (BORNSEMI) is a semiconductor company with independent R&D, design, production and sales as its main body. It is a high-tech enterprise specializing in wafer design, R&D, production and sales of protection devices and power devices. It is one of the international suppliers that master the core technology of semiconductor overvoltage protection devices and protection integrated circuits. BORN focuses on the development and sales of high-quality, high-performance analog integrated circuits and power devices, and always plans, develops and produces with the goal of world-class electronic technology. The company's products include: protection devices (TVS, ESD, TSS) power devices (MOS, SKY, DIODE, TRANSISTOR), driver ICs, interface chips, etc. BORN has a production base in Tianjin (a joint venture with the Institute of Microelectronics of the Chinese Academy of Sciences) and a production base in Henan (wafer manufacturing and packaging and testing). From wafer design, tape-out to packaging and testing, BORN strives for high reliability of product quality and creates a closed loop of the entire industry chain. In order to form two major system products, power and protection, the quality has reached the international advanced level, especially our company's low-capacitance series of semiconductor protection devices, which have independent intellectual property rights and patent systems. As an industry leader in the field of overcurrent and overvoltage devices, our products are an indispensable component of almost all products that use electrical energy, including: automotive electronic systems, traffic signals, equipment communication terminals, communication equipment, household and industrial electrical appliances, electricity, power supply equipment, and electronic circuit protection at the power input end.

Part Number Manufacturer Description Datasheet
DSS34 BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. schottky,3A 40V VF<0.55V SOD-123FL Download
SMBJ18A BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Unidirectional Peak pulse current (10/1000us): 20.6A Clampin ... Download
SMAJ33CA BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Bidirectional Peak pulse current (10/1000us): 7.5A Clamping ... Download
BZT52C15 BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Accuracy: - Voltage regulation value (typical value): 15V Reverse leak ... Download
SMBJ22A BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Unidirectional Peak pulse current (10/1000us): 16.9A Clampin ... Download
SI2301S BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25 ... Download
RB521S-30 BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. schottky,200mA 30V VF<0.5V Ir<30uA SOD-523 Download
BZT52C5V6 BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Accuracy: - Voltage regulation value (typical value): 5.6V Reverse lea ... Download
BZT52C5V1S BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Accuracy: - Voltage regulation value (typical value): 5.1V Reverse lea ... Download
MMBT4401 BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. ransistors,NPN 60V 600mA 300mW HFE=100~300,SOT-23 Download
DSS26 BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. schottky,2A 60V VF<0.7V SOD-123FL Download
BZT52C10 BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Maximum power: 500mW Accuracy: - Reverse leakage current: 0.2uA @ 7V V ... Download
MMBT5401 BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. ransistors,PNP 160V 600mA 300mW HFE=100~300,SOT-23 Download
BM3415E BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25 ... Download
SMBJ30A BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Unidirectional Peak pulse current (10/1000us): 12.4A Clampin ... Download
BM3402 BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25 ... Download
BM3407A BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25 ... Download
S9018 BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. ransistors,PNP 30V 50mA 200mW HFE=100~200 fT=850MHz,SOT-23 Download
ESDA14V2L BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Bidirectional / Unidirectional Peak pulse current (10/1000us ... Download
BZT52C27S BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Maximum power: 200mW Accuracy: - Reverse leakage current: 0.1uA @ 18.9 ... Download
BZT52C36 BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Maximum power: 500mW Accuracy: - Reverse leakage current: 0.1uA @ 25.2 ... Download
SMBJ6.0A BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. DO-214AA SMB 600W VRWM=6V unidirectional power TVS power port, etc. Download
SD05 BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Unidirectional Peak pulse current (10/1000us): 20A (8/20us) ... Download
SMAJ14A BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Unidirectional Peak pulse current (10/1000us): 17.3A Clampin ... Download
BEP0080TB-MC BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD.

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Download
SMDJ22A BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Unidirectional Peak pulse current (10/1000us): 84.5A Clampin ... Download
BSD3C051V BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Bidirectional Peak pulse current (10/1000us): 20A Clamping v ... Download
SMBJ440CA BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Bidirectional Peak pulse current (10/1000us): 800mA Clamping ... Download
BST23C152V BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Bidirectional Peak pulse current (10/1000us): 10A (8/20us) C ... Download
SMBJ26CA BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Bidirectional Peak pulse current (10/1000us): 14.3A Clamping ... Download

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