BORNSEMI (Shenzhen) Co., Ltd. (BORNSEMI) is a semiconductor company with independent R&D, design, production and sales as its main body. It is a high-tech enterprise specializing in wafer design, R&D, production and sales of protection devices and power devices. It is one of the international suppliers that master the core technology of semiconductor overvoltage protection devices and protection integrated circuits. BORN focuses on the development and sales of high-quality, high-performance analog integrated circuits and power devices, and always plans, develops and produces with the goal of world-class electronic technology. The company's products include: protection devices (TVS, ESD, TSS) power devices (MOS, SKY, DIODE, TRANSISTOR), driver ICs, interface chips, etc. BORN has a production base in Tianjin (a joint venture with the Institute of Microelectronics of the Chinese Academy of Sciences) and a production base in Henan (wafer manufacturing and packaging and testing). From wafer design, tape-out to packaging and testing, BORN strives for high reliability of product quality and creates a closed loop of the entire industry chain. In order to form two major system products, power and protection, the quality has reached the international advanced level, especially our company's low-capacitance series of semiconductor protection devices, which have independent intellectual property rights and patent systems. As an industry leader in the field of overcurrent and overvoltage devices, our products are an indispensable component of almost all products that use electrical energy, including: automotive electronic systems, traffic signals, equipment communication terminals, communication equipment, household and industrial electrical appliances, electricity, power supply equipment, and electronic circuit protection at the power input end.
Part Number | Manufacturer | Description | Datasheet |
---|---|---|---|
DSS34 | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | schottky,3A 40V VF<0.55V SOD-123FL | Download |
SMBJ18A | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Polarity: Unidirectional Peak pulse current (10/1000us): 20.6A Clampin ... | Download |
SMAJ33CA | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Polarity: Bidirectional Peak pulse current (10/1000us): 7.5A Clamping ... | Download |
BZT52C15 | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Accuracy: - Voltage regulation value (typical value): 15V Reverse leak ... | Download |
SMBJ22A | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Polarity: Unidirectional Peak pulse current (10/1000us): 16.9A Clampin ... | Download |
SI2301S | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25 ... | Download |
RB521S-30 | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | schottky,200mA 30V VF<0.5V Ir<30uA SOD-523 | Download |
BZT52C5V6 | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Accuracy: - Voltage regulation value (typical value): 5.6V Reverse lea ... | Download |
BZT52C5V1S | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Accuracy: - Voltage regulation value (typical value): 5.1V Reverse lea ... | Download |
MMBT4401 | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | ransistors,NPN 60V 600mA 300mW HFE=100~300,SOT-23 | Download |
DSS26 | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | schottky,2A 60V VF<0.7V SOD-123FL | Download |
BZT52C10 | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Maximum power: 500mW Accuracy: - Reverse leakage current: 0.2uA @ 7V V ... | Download |
MMBT5401 | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | ransistors,PNP 160V 600mA 300mW HFE=100~300,SOT-23 | Download |
BM3415E | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25 ... | Download |
SMBJ30A | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Polarity: Unidirectional Peak pulse current (10/1000us): 12.4A Clampin ... | Download |
BM3402 | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25 ... | Download |
BM3407A | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25 ... | Download |
S9018 | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | ransistors,PNP 30V 50mA 200mW HFE=100~200 fT=850MHz,SOT-23 | Download |
ESDA14V2L | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Polarity: Bidirectional / Unidirectional Peak pulse current (10/1000us ... | Download |
BZT52C27S | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Maximum power: 200mW Accuracy: - Reverse leakage current: 0.1uA @ 18.9 ... | Download |
BZT52C36 | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Maximum power: 500mW Accuracy: - Reverse leakage current: 0.1uA @ 25.2 ... | Download |
SMBJ6.0A | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | DO-214AA SMB 600W VRWM=6V unidirectional power TVS power port, etc. | Download |
SD05 | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Polarity: Unidirectional Peak pulse current (10/1000us): 20A (8/20us) ... | Download |
SMAJ14A | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Polarity: Unidirectional Peak pulse current (10/1000us): 17.3A Clampin ... | Download |
BEP0080TB-MC | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | —— |
Download |
SMDJ22A | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Polarity: Unidirectional Peak pulse current (10/1000us): 84.5A Clampin ... | Download |
BSD3C051V | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Polarity: Bidirectional Peak pulse current (10/1000us): 20A Clamping v ... | Download |
SMBJ440CA | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Polarity: Bidirectional Peak pulse current (10/1000us): 800mA Clamping ... | Download |
BST23C152V | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Polarity: Bidirectional Peak pulse current (10/1000us): 10A (8/20us) C ... | Download |
SMBJ26CA | BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. | Polarity: Bidirectional Peak pulse current (10/1000us): 14.3A Clamping ... | Download |