BAT54A datasheet, PDF - EEWORLD Datasheet

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BAT54A: DescriptionDC reverse withstand voltage (Vr): 30V Average rectified current (Io): 200mA Forward voltage drop (Vf): 1V @ 100mA schottky, 200mA 30V VF<1V Common anode, SOT-23; CategoryDiscrete semiconductor Schottky diode; File Size4MB，3 Pages; ManufacturerBORN SEMICONDUCTOR（SHENZHEN）CO.,LTD.; Websitehttp://www.born-tw.com/; BORNSEMI (Shenzhen) Co., Ltd. (BORNSEMI) is a semiconductor company with independent R&D, design, production and sales as its main body. It is a high-tech enterprise specializing in wafer design, R&D, production and sales of protection devices and power devices. It is one of the international suppliers that master the core technology of semiconductor overvoltage protection devices and protection integrated circuits. BORN focuses on the development and sales of high-quality, high-performance analog integrated circuits and power devices, and always plans, develops and produces with the goal of world-class electronic technology. The company's products include: protection devices (TVS, ESD, TSS) power devices (MOS, SKY, DIODE, TRANSISTOR), driver ICs, interface chips, etc. BORN has a production base in Tianjin (a joint venture with the Institute of Microelectronics of the Chinese Academy of Sciences) and a production base in Henan (wafer manufacturing and packaging and testing). From wafer design, tape-out to packaging and testing, BORN strives for high reliability of product quality and creates a closed loop of the entire industry chain. In order to form two major system products, power and protection, the quality has reached the international advanced level, especially our company's low-capacitance series of semiconductor protection devices, which have independent intellectual property rights and patent systems. As an industry leader in the field of overcurrent and overvoltage devices, our products are an indispensable component of almost all products that use electrical energy, including: automotive electronic systems, traffic signals, equipment communication terminals, communication equipment, household and industrial electrical appliances, electricity, power supply equipment, and electronic circuit protection at the power input end.

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BAT54A Overview

DC reverse withstand voltage (Vr): 30V Average rectified current (Io): 200mA Forward voltage drop (Vf): 1V @ 100mA schottky, 200mA 30V VF<1V Common anode, SOT-23

BAT54A Parametric

Parameter Name	Attribute value
DC reverse withstand voltage (Vr)	30V
Average rectified current (Io)	200mA
Forward voltage drop (Vf)	1V @ 100mA

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BAT54xx Series

SCHOTTKY

SWITCHING

SOT-23

Schottky Barrier Diode

ROHS

Features



Extremely Fast Switching Speed

MARKING:

BAT54

BAT54A

BAT54C

BAT54S

Solid dot = Green molding compound device,if none, the normal device.

Maximum Ratings & Thermal Characteristics

(

Ratings at 25℃ ambient temperature unless otherwise specified.)

Parameter

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Forward Continuous Current

Non-repetitive Peak Forward Surge Current @ t=8.3ms

Repetitive Peak Forward Current @ t≤1s,δ≤0.5

Power Dissipation

Thermal Resistance from Junction to Ambient

Junction Temperature

Storage Temperature

Symbol

RRM

RWM

FSM

FRM

ΘJA

stg

200

600

300

200

500

125

-55~+150

℃/W

℃

Value

Unit

Electrical Characteristics

(

Ratings at 25℃ ambient temperature unless otherwise specified).

Parameter

Reverse voltage

Symbol

(BR)

Min

Typ

Max

Unit

Test conditions

=100μA

=0.1mA

=1mA

=10mA

=30mA

=100mA

=25V

=1V,f=1MHz

=10mA

Irr=0.1×I

=100Ω

0.24

0.32

Forward voltage

0.40

0.50

Reverse current

Diode capacitance

Reverse recovery time

μA

Rev 8: Nov 2014

www.born-tw.com

Page 1 of 3

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