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BDFN1C051L

Description
Polarity: Bidirectional Peak pulse current (10/1000us): 3A (8/20us) Clamping voltage: 11V Breakdown voltage (minimum): 6V Reverse shutdown voltage (typ): 5V DFN0603/0201 5V Cj= 2pF bidirectional electrostatic TVS high-speed signal
CategoryDiscrete semiconductor    TVS diode   
File Size755KB,4 Pages
ManufacturerBORN SEMICONDUCTOR(SHENZHEN)CO.,LTD.
Websitehttp://www.born-tw.com/
BORNSEMI (Shenzhen) Co., Ltd. (BORNSEMI) is a semiconductor company with independent R&D, design, production and sales as its main body. It is a high-tech enterprise specializing in wafer design, R&D, production and sales of protection devices and power devices. It is one of the international suppliers that master the core technology of semiconductor overvoltage protection devices and protection integrated circuits. BORN focuses on the development and sales of high-quality, high-performance analog integrated circuits and power devices, and always plans, develops and produces with the goal of world-class electronic technology. The company's products include: protection devices (TVS, ESD, TSS) power devices (MOS, SKY, DIODE, TRANSISTOR), driver ICs, interface chips, etc. BORN has a production base in Tianjin (a joint venture with the Institute of Microelectronics of the Chinese Academy of Sciences) and a production base in Henan (wafer manufacturing and packaging and testing). From wafer design, tape-out to packaging and testing, BORN strives for high reliability of product quality and creates a closed loop of the entire industry chain. In order to form two major system products, power and protection, the quality has reached the international advanced level, especially our company's low-capacitance series of semiconductor protection devices, which have independent intellectual property rights and patent systems. As an industry leader in the field of overcurrent and overvoltage devices, our products are an indispensable component of almost all products that use electrical energy, including: automotive electronic systems, traffic signals, equipment communication terminals, communication equipment, household and industrial electrical appliances, electricity, power supply equipment, and electronic circuit protection at the power input end.
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BDFN1C051L Overview

Polarity: Bidirectional Peak pulse current (10/1000us): 3A (8/20us) Clamping voltage: 11V Breakdown voltage (minimum): 6V Reverse shutdown voltage (typ): 5V DFN0603/0201 5V Cj= 2pF bidirectional electrostatic TVS high-speed signal

BDFN1C051L Parametric

Parameter NameAttribute value
polarityBidirectional
Peak pulse current (10/1000us)3A (8/20us)
clamping voltage11V
Breakdown voltage (minimum value)6V
Reverse shutdown voltage (typ)5V

BDFN1C051L Preview

Download Datasheet
Transient Voltage Suppressors
Features
Small Body Outline Dimensions:
0.60 mm x 0.30 mm
Bidirectional ESD Protection of one Iine
Low Clamping Voltage
Low Capacitance:3.0 pF
Working Voltage: 5 V
Low Leakage Current
BDFN1C051L
ROHS
IEC COMPATIBILITY (EN61000-4)
IEC 61000-4-2 (ESD) ±15kV (air), ±10kV (contact)
IEC 61000-4-4 (EFT) 40A (5/50ns)
IEC 61000-4-5 (Lightning) 3A (8/20μs)
DFN0603-D
Mechanical Characteristics
DFN0603-D package
Molding compound flammability rating:
UL 94V-0
Marking: Marking Code
Packaging: Tape and Reel per EIA 481
RoHS Compliant
Applications
Cellular handsets and accessories
Portable electronics
Communication systems
Computers and peripherals
Schematic & PIN Configuration
1/4
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