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BAT54A

Description
0.3 A, 2 ELEMENT, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size77KB,3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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BAT54A Overview

0.3 A, 2 ELEMENT, SILICON, SIGNAL DIODE

BAT54A Parametric

Parameter NameAttribute value
Number of terminals3
Number of components2
Processing package descriptionSurface mount, 3 PIN
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingNOT SPECIFIED
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structureCOMMON ANODE, 2 ELEMENTS
Diode component materialssilicon
Maximum power consumption limit0.2500 W
Diode typeSignal diode
Maximum reverse recovery time0.0050 us
Maximum average forward current0.3000 A
MCC
Features
Low Forward Voltage
Surface Mount device
Very small conduction losses
  omponents
21201 Itasca Street Chatsworth

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BAT54
THRU
BAT54S
250mWatt, 30Volt
Schottky Barrier Diode
Type
Single
Dual
Dual
Dual
Pin
Configuration
(See Page 3)
MCC
Catalog
Number
BAT54
BAT54A
BAT54C
BAT54S
Device
Marking
L4P
L42
L43
L44
Figure 1
Figure 2
Figure 3
Figure 4
SOT-23
A
D
C
B
Maximum Ratings
Continuos Reverse Voltage
Forward Current
Non-Repetitive Peak Forward Current t<1s
Total Power Dissipation @ T
A
= 25°C
Storage Temperature Range
Junction Temperature
Soldering temperature during 10s
V
R
I
F
I
FSM
P
D
T
stg
T
j
T
j
30V
0.3A
1.0mA
250mW
-55°C to 150°C
150°C
260°C
G
F
E
H
J
K
DIMENSIONS
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
Electrical Characteristics @ 25
°C
Unless Otherwise Specified
Ratings
Forward Voltage at
I
F
= 0.1mA
I
F
= 1mA
I
F
= 10mA
I
F
= 30mA
I
F
= 100mA
Reverse Current
Reverse Breakdown
Voltage
Capacitance
Reverse Recovery
Time
Thermal Resistance,
Junction to Ambient
Symbol
Max.
240mV
320mV
400mV
500mV
900mV
2.0 uA
>30V
10pF
5nS
500K/W
Notes
V
F
DIM
A
B
C
D
E
F
G
H
J
K
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
V
R
= 25V
.035
.900
.031
.800
I
R
V
(BR)
C
J
t
rr
R
θJA
Measured at
1.0MHz, V
R
=1.0V
I
F
=I
R
=10mA;
I
(REC)
= 1mA
.037
.950
.037
.950
.079
2.000
inches
mm
www.mccsemi.com

BAT54A Related Products

BAT54A BAT54 BAT54C BAT54S
Description 0.3 A, 2 ELEMENT, SILICON, SIGNAL DIODE 0.2 A, 30 V, SILICON, SIGNAL DIODE 0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Number of terminals 3 3 3 3
Number of components 2 1 2 2
Processing package description Surface mount, 3 PIN ROHS COMPLIANT, PLASTIC PACKAGE-3 ROHS COMPLIANT, PLASTIC PACKAGE-3 SOT-23, 3 PIN
state DISCONTINUED ACTIVE ACTIVE DISCONTINUED
packaging shape Rectangle Rectangle Rectangle Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes Yes Yes
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location pair pair pair pair
Packaging Materials Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy
Craftsmanship SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
structure COMMON ANODE, 2 ELEMENTS single COMMON CATHODE, 2 ELEMENTS 系列 CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materials silicon silicon silicon silicon
Maximum power consumption limit 0.2500 W 0.2250 W 0.2250 W 0.2000 W
Diode type Signal diode Signal diode Signal diode Signal diode
Maximum average forward current 0.3000 A 0.2000 A 0.2000 A 0.2000 A
Maximum repetitive peak reverse voltage - 30 V 30 V 30 V

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