ES1D datasheet, PDF - EEWORLD Datasheet

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ES1D: DescriptionDC reverse withstand voltage (Vr): 200V Average rectified current (Io): 1A Forward voltage drop (Vf): 950mV @ 1A ultra fast rectifier, 1A 200V, Trr<35ns; CategoryDiscrete semiconductor General diode; File Size261KB，2 Pages; ManufacturerBORN SEMICONDUCTOR（SHENZHEN）CO.,LTD.; Websitehttp://www.born-tw.com/; BORNSEMI (Shenzhen) Co., Ltd. (BORNSEMI) is a semiconductor company with independent R&D, design, production and sales as its main body. It is a high-tech enterprise specializing in wafer design, R&D, production and sales of protection devices and power devices. It is one of the international suppliers that master the core technology of semiconductor overvoltage protection devices and protection integrated circuits. BORN focuses on the development and sales of high-quality, high-performance analog integrated circuits and power devices, and always plans, develops and produces with the goal of world-class electronic technology. The company's products include: protection devices (TVS, ESD, TSS) power devices (MOS, SKY, DIODE, TRANSISTOR), driver ICs, interface chips, etc. BORN has a production base in Tianjin (a joint venture with the Institute of Microelectronics of the Chinese Academy of Sciences) and a production base in Henan (wafer manufacturing and packaging and testing). From wafer design, tape-out to packaging and testing, BORN strives for high reliability of product quality and creates a closed loop of the entire industry chain. In order to form two major system products, power and protection, the quality has reached the international advanced level, especially our company's low-capacitance series of semiconductor protection devices, which have independent intellectual property rights and patent systems. As an industry leader in the field of overcurrent and overvoltage devices, our products are an indispensable component of almost all products that use electrical energy, including: automotive electronic systems, traffic signals, equipment communication terminals, communication equipment, household and industrial electrical appliances, electricity, power supply equipment, and electronic circuit protection at the power input end.

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ES1D Overview

DC reverse withstand voltage (Vr): 200V Average rectified current (Io): 1A Forward voltage drop (Vf): 950mV @ 1A ultra fast rectifier, 1A 200V, Trr<35ns

ES1D Parametric

Parameter Name	Attribute value
DC reverse withstand voltage (Vr)	200V
Average rectified current (Io)	1A
Forward voltage drop (Vf)	950mV @ 1A

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ES1A-ES1J SERIES

RECTIFIERS

FEATURES

●

Super fast switching time for high efficiency

●

Low forward voltage drop and

SMA FAST SURFACE MOUNT RECTIFIERS

SMA

ROHS

high current capability

●

Low reverse leakage current

●

Plastic material has UL flammability

.062(1.60)

.055(1.40)

.114(2.90)

.098(2.50)

classification 94V-0

.181(4.60)

.157(4.00)

.012(.305)

.006(.152)

.103(2.62)

.079(2.00)

MECHANICAL DATA

●

Case： Molded Plastic

●

Polarity: lndicated by cathode band

●

Weight: 0.002 ounces,0.064 grams

●

Mounting position: Any

.060(1.52)

.030(0.76)

.208(5.28)

.188(4.80)

.008(.203)

.002(.051)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave ,60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

CHARACTERISTICS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward

Rectified Current

Peak Forward Surage Current

8.3ms Single Half Sine-Wave

Super Imposed on Rated Load(JEDEC Method)

Peak Forward Voltage at 1.0A DC

Maximum DC Reverse Current

at Rated DC Blocking Voltage

=25℃

=100℃

=55

℃

SYMBOL

RRM

RMS

(AV)

ES1A

ES1B

100

ES1D

200

140

200

1.0

ES1G

400

280

400

ES1J

600

420

600

UNIT

FSM

θJA

STG

0.95

1.25

5.0

100

-55 to +150

1.70

μA

℃/W

℃

Maximum Reverse Recovery Time(Note 1)

Tyical Junction Capacitance (Note2)

Tyical Thermal Resistance (Note3)

Operating Temperature Range

Storage Temperature Range

NOTES: 1.Measured with I

=0.5A, I

=1A, I

=0.25A

2.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC

3.Thermal resistance junction of ambient.

Rev 8: Nov 2014

www.born-tw.com

112

Page 1 of 2

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