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Datasheet> All Categories > Discrete semiconductor> diode> RBR3MM60BTFTR
RBR3MM60BTFTR PDF
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RBR3MM60BTFTR

Description
Schottky Diode, 3A, 60V, Surface Mount, SOD-123FL package, 2-pin
CategoryDiscrete semiconductor    diode   
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
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RBR3MM60BTFTR Overview

RBR3MM60BTFTR Schottky barrier diodes have an epitaxial planar structure, and the small molded type is mainly used for general rectification applications. - High reliability - low VF (forward voltage)

RBR3MM60BTFTR Parametric

Parameter NameAttribute value
categoryDiscrete semiconductor;diode
MakerROHM Semiconductor
seriesAutomotive, AEC-Q101
PackageTape and Reel (TR) Cut Tape (CT)
technologySchottky
Voltage - DC reverse (Vr) (maximum)60 V
Current - average rectification (Io)3A
Voltage at different If - Forward (Vf)610 mV @ 3 A
speedFast recovery = < 500ns, > 200mA (Io)
Current at different Vr - reverse leakage120 µA @ 60 V
Capacitance at different Vr, F-
Installation typesurface mount type
Package/casingSOD-123F
Supplier device packagingPMDU
Operating Temperature - Junction150°C (maximum)
Basic product numberRBR3MM60

RBR3MM60BTFTR Preview

Download Datasheet
RBR3MM60BTF
Schottky Barrier Diode
(AEC-Q101 qualified)
Data sheet
　 　 　
　
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　
●
Outline
V
R
I
o
I
FSM
60
3
30
V
A
A
　
　
　
　
　
　
　
　　　
●
Inner Circuit
●
Features
High reliability
Small power mold type
Low V
F
●
Application
General rectification
●
Structure
Silicon epitaxial planar
●
Packaging Specifications
Packing
Embossed T
ape
Reel Size(mm)
180
T
aping Width(mm)
8
Quantity(pcs)
3000
T
aping Code
TR
Marking
E4
●
Absolute Maximum Ratings (T
c
=25ºC unless otherwise specified)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average rectified forward current
Peak forward surge current
Junction temperature
(1)
Storage temperature
Symbol
V
RM
V
R
I
o
I
FSM
T
j
T
stg
Conditions
Duty
≦
0.5
Reverse direct voltage
Glass epoxy mounted
、
60Hz half sin waveform
、
resistive load
、
T
c
=40
℃
Max.
60Hz half sin waveform
、
Non-repetitive
、
one cycle
、
T
a
=25
℃
Limits
60
60
3
30
150
-55
½
150
Unit
V
V
A
A
℃
℃
-
-
Note(1) T avoid occurrence of thermal runaway
，
actual board is to be designed to fulfill dP
d
/dT
j
<1/R
th(j-a)
.
o
●
Characteristics (T
j
=25ºC unless otherwise specified)
Parameter
Forward voltage
Reverse current
Attention
Symbol
V
F
I
R
Conditions
I
F
=3A
V
R
=60V
Min. Typ. Max. Unit
-
-
-
-
0.61
120
V
μA
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　
www.rohm.com
1/5
© 2016- ROHM Co., Ltd. All rights reserved.
　
2019/05/28_Rev.002

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