5) Intermediate frequency (RF interface, RF signal processor):
Structure: It is composed of receiving demodulator, transmitting modulator, transmitting phase detector and other circuits; new mobile phones also integrate high-power tubes, frequency synthesis, 26M oscillation and frequency division circuits inside (as shown in the figure below).
Function:
a) The internal high-power amplifier tube amplifies the weak current induced by the antenna;
b) When receiving, the 935M-960M (GSM) receiving carrier signal (with the other party's information) and the local oscillator signal (without information) are demodulated to obtain the receiving baseband information of 67.707KHZ;
c) When transmitting, the transmission information processed by the logic circuit and the local oscillator signal are modulated into the transmission intermediate frequency;
d) Combined with the 13M/26M crystal to generate a 13M clock (reference clock circuit);
e) According to the reference signal sent by the CPU, a local oscillator signal that meets the working channel of the mobile phone is generated.
3. Signal receiving process
When the mobile phone receives, the antenna converts the electromagnetic wave sent by the base station into a weak AC current signal, which passes through the antenna switch receiving path and is sent to the high-frequency filter to filter out other useless noise, obtaining a pure 935M-960M (GSM) receiving signal. After being coupled by the capacitor, it is sent to the corresponding high-frequency tube inside the intermediate frequency for amplification, and then sent to the demodulator for demodulation with the local oscillator signal (without information) to obtain 67.707KHZ receiving baseband information (RXI-P, RXI-N, RXQ-P, RXQ-N); it is sent to the logic audio circuit for further processing.
Structure and working principle of the transmitting circuit
When transmitting, the transmitting baseband information processed by the logic circuit is modulated into the transmitting intermediate frequency, and the transmitting intermediate frequency signal is frequency-upgraded to the frequency signal of 890M-915M (GSM) by the TX-VCO. After being amplified by the power amplifier, it is converted into electromagnetic waves by the antenna and radiated out.
The key points of this circuit are: (1) circuit structure; (2) functions and effects of each component; (3) transmitting signal process.
1. Circuit structure
The transmitting circuit consists of the transmitting modulator and phase detector inside the intermediate frequency; transmitting voltage-controlled oscillator (TX-VCO), power amplifier (PA), power controller (PC), transmitting mutual inductor and other circuits. (As shown below)
2. Functions and effects of each component
1) Transmit modulator:
Structure: The transmit modulator is inside the intermediate frequency, which is equivalent to the MOD in the broadband network.
Function: When transmitting, the transmit baseband information (TXI-P;TXI-N;TXQ-P;TXQ-N) processed by the logic circuit and the local oscillator signal are modulated into the transmit intermediate frequency.
2) Transmit voltage-controlled oscillator (TX-VCO):
Structure: The transmit voltage-controlled oscillator is a capacitor three-point oscillation circuit with voltage-controlled output frequency; it is integrated into a small circuit board during manufacturing, and five pins are led out: power supply pin, ground pin, output pin, control pin, 900M/1800M frequency band switching pin. When there is a suitable working voltage, it oscillates to generate the corresponding frequency signal.
Function: Convert the transmit intermediate frequency signal modulated by the modulator in the intermediate frequency into the 890M-915M (GSM) frequency signal that the base station can receive.
Principle: As we all know, the base station can only receive the frequency signal of 890M-915M (GSM), while the intermediate frequency signal modulated by the intermediate frequency modulator (such as the intermediate frequency signal 135M transmitted by Samsung) cannot be received by the base station. Therefore, the TX-VCO is used to change the frequency of the transmitted intermediate frequency signal to the frequency signal of 890M-915M (GSM).
When transmitting, the power supply part sends out 3VTX voltage to make the TX-VCO work, and the generated frequency signal of 890M-915M (GSM) is divided into two paths: a) the sampling is sent back to the intermediate frequency, mixed with the local oscillator signal to generate a transmission frequency discrimination signal equal to the transmission intermediate frequency, and sent to the phase detector for comparison with the transmission intermediate frequency; if the TX-VCO oscillates the frequency that does not match the working channel of the mobile phone, the phase detector will generate a 1-4V jump voltage (DC voltage with AC transmission information) to control the capacitance of the variable capacitance diode inside the TX-VCO to achieve the purpose of adjusting the frequency accuracy. b) it is sent to the power amplifier and amplified, and then converted into electromagnetic waves by the antenna for radiation.
From the above, we can see that: the frequency generated by TX-VCO is sampled and sent back to the intermediate frequency, and then a voltage is generated to control the operation of TX-VCO; it just forms a closed loop, and it controls the frequency phase, so this circuit is also called a transmitting phase-locked loop circuit.
3) Power amplifier (power amplifier):
Structure: The power amplifier of the current mobile phone is a dual-frequency power amplifier (900M power amplifier and 1800M power amplifier integrated into one), which is divided into black glue power amplifier and iron shell power amplifier; different models of power amplifiers cannot be interchanged.
Function: Amplify the frequency signal oscillated by TX-VCO, obtain sufficient power current, and convert it into electromagnetic waves through the antenna for radiation.
It is worth noting that the power amplifier amplifies the amplitude of the transmitting frequency signal, and cannot amplify its frequency.
Working conditions of power amplifier:
a) Working voltage (VCC): The power supply of mobile phone power amplifier is directly provided by battery (3.6V);
b) Ground terminal (GND): Make the current form a loop;
c) Dual-frequency power conversion signal (BANDSEL): Control the power amplifier to work at 900M or 1800M;
d) Power control signal (PAC): Control the amplification amount (working current) of the power amplifier;
e) Input signal (IN); Output signal (OUT).
4) Transmitting transformer:
Structure: Two coils with equal wire diameter and number of turns are close to each other and are composed by mutual inductance principle.
Function: Sample the power current transmitted by the power amplifier and send it to the power control.
Principle: When the power current transmitted by the power amplifier passes through the transmitting transformer during transmission, a current of the same magnitude as the power current is induced in its secondary, which is sent to the power control after detection (high-frequency rectification).
5) Power level signal:
The so-called power level means that engineers divide the receiving signal into eight levels when programming the mobile phone. Each receiving level corresponds to a level of transmission power (as shown in the following table). When the mobile phone is working, the CPU determines the distance between the mobile phone and the base station based on the received signal strength and sends out the appropriate transmission level signal to determine the amplification of the power amplifier (that is, when the reception is strong, the transmission is weak).
Attached is the power level table:
6) Power controller (power control):
Structure: It is an operational comparison amplifier.
Function: Compare the transmission power current sampling signal with the power level signal to obtain a suitable voltage signal to control the amplification of the power amplifier.
Principle: When the power current passes through the transmission transformer during transmission, the current induced in its secondary is sent to the power control after detection (high-frequency rectification); at the same time, the preset power level signal is also sent to the power control during programming; after the two signals are compared internally, a voltage signal is generated to control the amplification of the power amplifier, so that the working current of the power amplifier is moderate, which saves power and prolongs the service life of the power amplifier (the higher the power control voltage, the greater the power of the power amplifier).
3. Transmitting signal flow
When transmitting, the transmission baseband information (TXI-P; TXI-N; TXQ-P; TXQ-N) processed by the logic circuit is sent to the transmission modulator inside the intermediate frequency and modulated with the local oscillator signal into the transmission intermediate frequency. The intermediate frequency signal base station cannot receive, and the TX-VCO must be used to increase the frequency of the transmitting intermediate frequency signal to the frequency signal of 890M-915M (GSM) so that the base station can receive it. When the TX-VCO is working, the frequency signal of 890M-915M (GSM) is generated and divided into two paths:
a) One path is sampled and sent back to the intermediate frequency, mixed with the local oscillator signal to generate a transmitting frequency discrimination signal equal to the transmitting intermediate frequency, and sent to the phase detector for comparison with the transmitting intermediate frequency; if the TX-VCO oscillation frequency does not match the working channel of the mobile phone, the phase detector will generate a 1-4V jump voltage to control the capacitance of the variable capacitance diode inside the TX-VCO to achieve the purpose of adjusting the frequency.
b) Two paths are sent to the power amplifier, amplified, and converted into electromagnetic waves by the antenna for radiation. In order to control the amplification of the power amplifier, when the power current passes through the transmitting transformer during transmission, the current induced on its secondary side is sent to the power control after detection (high-frequency rectification); at the same time, the preset power level signal is also sent to the power control during programming; after internal comparison of the two signals, a voltage signal is generated to control the amplification of the power amplifier, so that the operating current of the power amplifier is moderate, which saves electricity and prolongs the service life of the power amplifier.
Current status of the domestic RF chip industry chain
In the field of RF chips, the market is mainly monopolized by overseas giants. The main overseas companies are Qrovo, skyworks and Broadcom; in terms of domestic RF chips, no company can independently support the IDM operation model, mainly Fabless design companies; domestic enterprises have formed a "soft IDM" operation model through the collaboration of design, foundry and packaging.
In terms of RF chip design, domestic companies have achieved some results in 5G chips and have a certain shipment capacity. RF chip design has a high threshold. After having RF development experience, it can accelerate the development of subsequent advanced RF chips. At present, companies with RF chip design include Ziguang Zhanrui, Weige Chuangxin, Zhongpuwei, ZTE, Rapoo Technology, Huahong Design, Jiangsu Juxin, Aistek, etc.
In terms of RF chip foundry, Taiwan has become the world's largest compound semiconductor chip foundry. The main foundries in Taiwan are Win Semiconductors, Macronix and Huanyu. Only Sanan Optoelectronics and Hiwin Huaxin in China have begun to get involved in compound semiconductor foundry. Sanan Optoelectronics is currently the most complete domestic layout in China, with GaAs The HBT/pHEMT and GaNSBD/FET process layout is currently cooperating with more than 200 domestic enterprises and institutions. More than 10 chips have passed performance verification and are about to be mass-produced. Haiwei Huaxin is a subsidiary of Hitech High-tech Holdings and a joint venture with China Electronics Technology Group Corporation 29. It currently has GaAs 0.25um PHEMT process capabilities.
In terms of RF chip packaging, on the one hand, the increase in frequency of 5G RF chips causes the connection lines in the circuit to have a greater impact on the circuit performance, and the length of the signal connection lines needs to be reduced during packaging; on the other hand, the power amplifier, low-noise amplifier, switch and filter need to be packaged into a module, which not only reduces the volume but also facilitates the use of downstream terminal manufacturers. In order to reduce the parasitics of RF parameters, Flip-Chip, Fan-In and Fan-Out packaging technologies are required.
When packaging with Flip-Chip, Fan-In and Fan-Out processes, there is no need to use gold wire bonding wires for signal connection, which reduces the parasitic electrical effects caused by gold wire bonding wires and improves the RF performance of the chip; by 5G In this era, high-performance Flip-Chip/Fan-In/Fan-Out combined with SIP packaging technology will be the trend of future packaging.
Flip-Chip/Fan-In/Fan-Out and Sip packaging are advanced packaging, and their profitability is much higher than that of traditional packaging. After the domestic listed company, Changdian Technology acquired STATS ChipPAC, it formed a complete FlipChip+Sip technology packaging capability.
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