What is GAN semiconductor technology and how does it work?

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What is GAN semiconductor technology and how does it work? [Copy link]

For decades, the electronics and technology industries have relied on silicon as the main semiconductor chips used in their production. But lately, this chip has been scarce because its demand has become more important than its supply.

Many experts even predicted that it would take a long time for these industries to recover from the scarcity of silicon. However, many companies are now using gallium nitride (GaN). GaN is smaller, more efficient, and more environmentally friendly than silicon. It is also faster and easier to make.

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GaN semiconductors are better suited for devices used in more complex environments because they can withstand higher temperatures. GaN is creating innovative changes and chain reactions in the field of electronics and technology. Although silicon chips are an essential component of gadgets that convert energy into electricity, it is slowly but surely being replaced by GaN.

What is GaN semiconductor technology and why is it important?

GaN is composed of gallium, which has an atomic number of 31, and nitrogen, which has an atomic number of 7. GaN is a binary wide-bandgap semiconductor. It is more compatible with transistors with very high power and temperature. GaN is also used in lasers, semiconductor power devices, and more. Although GaN has been in use since the 1990s, it was enhanced in 2006 to allow GaN transistors to be produced in the same process as silicon in a factory. The only difference is that GaN is cost-effective and has better performance than silicon.

All semiconductors have a bandgap, but they are always different. The bandgap determines the semiconductor's ability to conduct electricity. For example, GaN has a bandgap of 3.4eV, while silicon has a bandgap of 1.2eV.

This bandgap difference means that GaN transistors can carry higher temperatures and voltages than silicon transistors. It also means that when silicon transistors reach their limits, GaN transistors are just getting started. This makes GaN more suitable for devices with high frequencies and high powers.

Although they are smaller in form factor than silicon transistors, GaN transistors can conveniently handle a wider range of electric fields than silicon while having faster and better switching.

GaN technologies are becoming more popular as they provide better output and performance. In addition, GaN technologies reduce the space and human resources required to provide output and performance. They can also be used in a variety of products.

A Silicon to GaN data center upgrade is expected to reduce energy losses by 30% to 40% by 2030. This translates into a saving of more than 125 metric tons and 100 terawatt hours of CO2 emissions. This is possible because GaN semiconductors have a carbon footprint 10 times smaller than silicon chips.

Furthermore, as GaN technology improves, it will become more cost-effective than silicon and have better performance. Therefore, there is a good chance that GaN transistors will replace silicon transistors in the future.

Advantages of GaN Semiconductor Technology

GaN semiconductors have several advantages over their counterparts, silicon semiconductors. Here are some of the advantages:

GaN semiconductors can withstand higher frequencies and temperatures than silicon. As a result, they cool faster, become less magnetic, and quickly switch from liquid to air cooling.

GaN semiconductors are more cost-effective than silicon. They also reduce energy costs, which means less material cost and size.

They have higher switching frequencies. This is because GaN semiconductors use smaller capacitors and inductors in their power circuits. This ensures that their frequency becomes 10 times that of inductance and capacitance, which significantly reduces size, cost and weight. This also means that they can withstand larger electric fields.

How does GaN semiconductor technology work?

GaN semiconductors are used in integrated circuits and power transistors to achieve high efficiency. A thin layer of aluminum gallium nitride is grown on a gallium nitride (GaN) crystal. Strain is created at the interface that produces a 2DEG (two-dimensional electron gas).

This highly conductive 2DEG can be used to conduct electrons efficiently when an electric field is introduced. 2DEG has high conductivity because the electrons are confined to a small space at the interface.

This results in an increase in the mobility of electrons from about 1000 cm^2/Vs to between 1500 and 2000 cm^2/Vs. And because of the high mobility of electrons, GaN integrated circuits and transistors have better strength, thermal conductivity, resistance, and faster switching momentum.

GaN RF devices are used to achieve better transmission in laptops, mobile phones, and Wi-Fi. GaN is also used in adapters and chargers to power them. Its semiconductors are also used in data server centers. They are widely used in different applications. This shows how flexible and dynamic they are.

Final Thoughts

GaN is the next generation of semiconductors. And as GaN's performance and potential capabilities in integrated circuits and transistors improve, tech companies should pay more attention to it.

GaN semiconductors have faster switching speeds, which reduces switching losses. They also don’t require as much power to drive circuits. They operate at higher temperatures and frequencies than silicon chips. There is no doubt that GaN semiconductors are the next game changer in the technology and electronics industries.