Hefei Roshow Silicon Carbide Plant may complete equipment installation and commissioning by the end of July, and start small-scale trial production in September

Recently, Luxshow Technology released an investor relations activity record sheet, which revealed new developments in the Hefei silicon carbide project.

On August 8, 2020 and September 15, 2020, Luxshare Technology signed the "Strategic Cooperation Framework Agreement between Changfeng County, Hefei City and Luxshare Technology Co., Ltd. to Jointly Invest in the Construction of the Third-Generation Power Semiconductor (Silicon Carbide) Industrial Park" and the "Changfeng County Investment Promotion Project Investment Cooperation Agreement" with the People's Government of Changfeng County, Hefei City and the Management Committee of Anhui Changfeng Shuangfeng Economic Development Zone, respectively.

It is reported that Luxshare Technology will jointly invest with the People's Government of Changfeng County, Hefei City to build a third-generation power semiconductor (silicon carbide) industrial park in Changfeng County, Hefei City, including but not limited to the research and development and industrialization projects of third-generation semiconductors such as silicon carbide, including the research and development and production of silicon carbide crystal growth, substrate production, epitaxial growth, etc. The total investment scale of the project is expected to be 10 billion yuan.

Roshow Technology stated that on June 25, 2021, Roshow Technology, Hefei Beicheng, Changfeng Tetrahedron, and Hefei Changfeng Industrial Investment Promotion Venture Capital Fund Partnership (Limited Partnership) (Hefei Industrial Investment as the leader) signed a capital increase agreement. At present, the silicon carbide substrate has been sent for sample and passed the test, and Hefei Roshow's production equipment has entered the installation and commissioning stage.

Luxshare Technology also stated that the silicon carbide factory invested in Hefei has fully mastered the various coupling relationships between the process parameters of 6-inch conductive silicon carbide crystal growth, determined the merits of each process parameter, and the pilot line growth yield has reached 40%, with equipment and technical conditions for repeatable and batch growth of silicon carbide crystals. Among them, Luxshare Technology provides 100% domestically produced crystal growth equipment. At present, according to the improvement of the process, the crystal growth furnace has been optimized for three generations and the equipment has been finalized. The 100 equipment in the first phase of the Hefei project have been completed for factory commissioning, and it is expected that the installation and commissioning will be completed in the Hefei factory by the end of July. The substrate has passed the tests of many third-party units and has reached the P-level standard. With the gradual arrival of substrate processing equipment, cleaning equipment, testing equipment, etc., and the further optimization of the processing technology, the Hefei factory can achieve small-scale trial production of 6-inch conductive silicon carbide substrates in September.