Innoscience and ASML sign cooperation agreement

On January 21, 2021, Innoscience Technologies Co., Ltd. and ASML reached an agreement to purchase in bulk high-capacity i-line and KrF lithography machines for the manufacture of advanced silicon-based gallium nitride power devices.

Innoscience Technology Co., Ltd., a world-leading manufacturer of GaN-on-Si integrated devices, and ASML, a lithography machine manufacturer, recently reached a cooperation agreement to purchase high-capacity i-line and KrF lithography machines in bulk. ASML is a global leader in chip manufacturing equipment. Its XT400 and XT860 i-line and KrF have been upgraded to manufacture GaN power devices on silicon wafers. With its unique TWINSCAN (twin worktable) architecture, ASML's i-line and KrF lithography machines can provide the most outstanding performance, the highest production efficiency in the market and the lowest cost. The twin worktable technology architecture has become the representative of advanced lithography technology in the global 300mm and 200mm wafer mass production lines. Innoscience will move in the first batch of lithography machines in the second quarter of this year. This is the first time that the advanced ASML TWINSCAN (twin worktable) lithography technology has been applied in mass production in the third-generation semiconductor field. This implementation marks the official entry of the third-generation semiconductor manufacturing technology into a new era.

Founded in December 2015, Innoscience Technology Co., Ltd. is a company dedicated to the manufacture of third-generation semiconductor silicon-based gallium nitride chips. The company has successfully built and put into production the world's first 200mm silicon-based gallium nitride wafer and power device mass production line. Its main products include 200mm silicon-based gallium nitride wafers and 30V-650V gallium nitride power devices. The design and performance of Innoscience's products have reached the most advanced international level, and have been widely used in PD fast charging, stereoscopic (3D) cameras, mobile electronic devices (including smartphones, laptops, tablets) and other fields. Innoscience is committed to building a world-class brand and contributing to the development of the global wide bandgap semiconductor industry.

Power devices and circuits can achieve efficient energy management through high switching frequency and high power density. These functions can be widely used in fast-growing emerging markets such as data centers, renewable energy and next-generation wireless communication networks. In addition to its small size, silicon-based gallium nitride is also an ideal choice for markets such as fast charging, DC power grids, and new energy vehicles due to its high frequency and high power density. "Third-generation semiconductor" materials include gallium nitride (GaN), silicon carbide (SiC), aluminum nitride (AlN), diamond and zinc oxide (ZnO), and gallium nitride (GaN) is a typical representative of "third-generation semiconductor" materials, with broad market application prospects.

At the signing ceremony held in Zhuhai on January 21, 2021, Mr. Sun Zaiheng, CEO of Innoscience, said: "I am very honored to announce that Innoscience has reached a cooperation agreement with ASML. We will work together to change the future with gallium nitride technology. As a company committed to promoting the innovation revolution of the third-generation semiconductor, we need to cooperate with global semiconductor leaders like ASML to adopt more advanced manufacturing processes to achieve higher performance, yield and output, and jointly launch the most advanced solutions and next-generation gallium nitride devices in various rapidly growing application fields (such as fast charging, TOF cameras (Time-of-Flight Cameras), smartphones, electric vehicles, data centers, etc.), to create more valuable products and services for our customers, partners and consumers. The third-generation semiconductor is a revolutionary upgrade of the industry. Change is never simple. It requires us to work together. Working together, we will achieve win-win cooperation.

ASML全球副总裁，中国区总裁沈波表示：“我们很高兴成为英诺赛科的合作伙伴，第三代半导体在全球市场有广阔的应用前景，阿斯麦会全力提供光刻解决方案和服务，支持英诺赛科在这一领域的发展。”

“Our XT platform for 200mm wafer production lines, including i-line, KrF and dry ArF, is an ideal long-term solution for the fast-growing GaN-on-Si market, not only in terms of productivity and cost, but also as overlay accuracy and imaging requirements expand over time as GaN is used in new applications,” said Toni Mesquida Kuesters, senior director of product marketing and business development for ASML’s Deep UV Lithography business. “We are committed to helping Innoscience achieve its goals and look forward to a fruitful collaboration.”