According to foreign media reports, TSMC recently revealed that its future 3nm process technology development goal is to achieve 250 million transistors/mm² in process packaging!
TSMC's CEO confirmed that the development of the 3nm node is on track, with risk production scheduled for 2021 and mass production to begin in the second half of 2022. In addition, TSMC decided to use FinFET transistor technology for 3nm.
Source: WikiChip Fuse
In terms of performance improvement, TSMC's 5nm has a 15% performance improvement and a 30% increase in energy consumption compared to 7nm, while the 3nm has a 7% performance improvement and a 15% increase in energy consumption compared to 5nm.
The 3nm process is the largest investment in the semiconductor industry in recent years, and it is also a key battle for the leading companies. It is understood that TSMC's total investment in 3nm process is as high as NT$1.5 trillion, about US$50 billion, and the construction of the factory alone is at least US$20 billion.
As TSMC's main competitor, Samsung has never stopped trying to catch up with TSMC. After Samsung fell far behind TSMC in the 14nm process, TSMC was far ahead in the subsequent 10nm and 7nm processes. Therefore, Samsung skipped 5nm and went directly to the 3nm process, planning to invest US$116 billion by 2030, hoping to surpass TSMC and become the world's largest wafer foundry.
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