Sanan Optoelectronics invests heavily again and plans to invest in Mini/Micro LED epitaxy and chip projects

Sanan Optoelectronics announced that it has signed a project investment contract with the Hubei Gedian Economic and Technological Development Zone Management Committee, with a total investment of 12 billion yuan. According to the contract, Sanan Optoelectronics will invest in a III-V compound semiconductor project in the jurisdiction of the Hubei Gedian Economic and Technological Development Zone Management Committee, mainly engaged in the research and development, production and sales of Mini/Micro LED epitaxial and chip products and related applications.

Sanan Optoelectronics said that Mini/Micro LED is one of the company's key development directions in the future. This investment project is in line with the national industrial policy planning, the company's industrial development direction and development strategy, and is conducive to improving the company's product structure, enhancing the company's core competitiveness, and consolidating the company's industry position.

As early as September 2018, industry insiders said that Sanan Optoelectronics will establish its first Micro LED epitaxial wafer and chip production line in the first quarter of 2019.

According to reports, Sanan has developed a Micro LED product with a diameter of 20 microns; at the same time, Sanan will also produce 4-micron LEDs and 10-micron LED flip chips.

In addition, as of September 2018, Sanan has applied for 27 Micro LED patents and plans to start producing Micro LED products for smart wearable devices, large-size panels over 100 inches, and small-size panels such as car taillights by the end of 2019.

Sanan Optoelectronics Co., Ltd. was established in November 2000. It is mainly engaged in the research, development, production and sales of full-color ultra-high brightness LED epitaxial wafers, chips, III-V compound semiconductor materials, microwave communication integrated circuits and power devices, optical communication components, etc., and its product performance indicators are at the international advanced level. Relying on its strong corporate strength, the company expanded the industrialization scale of LED epitaxial chip research and development and manufacturing in 2014, invested in the integrated circuit industry, and built gallium arsenide high-speed semiconductor and gallium nitride high-power semiconductor projects. In 2018, Sanan Optoelectronics invested 33.3 billion yuan in III-V compound semiconductor materials, LED epitaxial, chips, microwave integrated circuits, optical communications, radio frequency filters, power electronics, SIC materials and devices, special packaging and other industries in Nan'an High-tech Industrial Park, Quanzhou, Fujian. After the project is completed in 2022, Sanan Optoelectronics will realize the layout of the entire industrial chain in the high-end field of semiconductor compounds, and the company's high-tech and production scale will enter the ranks of international leaders.