Power MOS driver in controller-EEWORLD

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Introduction

The IO voltage of a general-purpose MCU or DSP is usually 5V3.3V, and the current output capacity of the IO is below 20MA, which is not enough to directly drive the power MOSFET. Therefore, when using a general-purpose MCU or DSP to design a motor driver, it is usually necessary to use an external MOSFET driver, which we call a "pre-driver". When designing motor drive controllers for automotive fans, water pumps, oil pumps, etc., using automotive-grade MCU + automotive-grade pre-driver + automotive-grade N-channel power MOSFET can adapt to different powers, various communication methods and various drive methods.

Power MOS driver in the controller

As shown in the figure above, the power stage drive circuit of the three-phase brushless DC motor (including BLDC and PMSM) uses 6 N-channel power MOS to form a three-phase full bridge, which is divided into three high-side MOS connected to the positive pole of the power supply (VBus) and three low-side MOS connected to the negative pole of the power supply. The controller completes the phase change by controlling the on and off of the six MOS, so that the motor rotates as expected. The motor may encounter stalling during operation and cause overcurrent, so the MOS drive circuit needs to have a protection function to prevent burning the controller or motor.

For a single NMOS, when it is turned on, it is necessary to provide an instantaneous large current to charge the parasitic capacitance in the MOS. The MOS can only be fully turned on after the gate-source voltage (VGS) reaches a certain threshold. After the MOS is turned on, it is also necessary to maintain a suitable gate-source voltage (VGS) to keep it turned on.
For the low-side MOS, its source (S) is connected to the negative pole of the power supply, the gate-source voltage is easy to meet, and the drive is relatively simple. For the high-side MOS, its source (S)

is connected to the motor phase line, and its voltage is uncertain. If it needs to be turned on, the gate voltage needs to be provided by the bootstrap circuit, and the drive is more complicated.

In general, the on-resistance of MOS is as shown in the figure above, which decreases with the increase of VGS, but the decreasing curve becomes gentle after VGS is greater than 10V. In order to achieve the minimum on-resistance (RDSON), the value of VGS is usually 10~15V.

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