IR launches discrete solution for DC-DC energy-saving automotive applications

International Rectifier has introduced the AUIRS2191S 600V driver IC and AUIRGP50B60PD1 600V non-punch-through (NPT) insulated gate bipolar transistor (IGBT) for DC-DC energy-efficient automotive applications.

The new devices feature very fast switching speeds and high power density, making them ideal for high-frequency DC-DC applications, including high-power DC-DC switch-mode power supply (SMPS) converters for electric and hybrid electric vehicles.

The AUIRS2191S dual-channel 600V driver IC enables independent control of the high side and low side in a half-bridge topology. The device provides current capability up to 3.5 A/-3.5A (source/sink) with very fast propagation delay times (typically 90ns), making the switch highly responsive to driver commands. The high and low sides of the IC have independent control, customizable dead time for lowest power consumption, and matching propagation delays for both channels. The product also offers an operating junction temperature up to 150°C and dual-channel undervoltage lockout, with the logic ground offset pin Vss separated from the COM power ground pin having higher immunity to COM transient voltage changes.

The AUIRS2191S IC uses proprietary high-voltage integrated circuit (HVIC) and latch-up immune CMOS technology to provide a rugged monolithic structure. The output driver has a high pulse current buffer stage for the lowest drive transconductance. The floating channel can be used to drive N-channel power MOSFETs or IGBTs in a high-side configuration with an operating voltage of up to 600V. In addition, these devices have a baseline negative voltage spike immunity, which allows reliable operation even under extreme switching conditions and short-circuit conditions.

The AUIRGP50B60PD1 600V non-punch-through insulated gate bipolar transistor is co-packaged with a 25A ultra-fast soft recovery diode and can switch at speeds up to 150kHz, making it an ideal replacement for MOSFETs in high-power SMPS applications. This new automotive IGBT device utilizes IR's thin wafer manufacturing technology, which helps to shorten the consumption time of minority carriers and speed up turn-off.

The device has a very small turn-off tail current and low turn-off switching loss, which helps designers increase the operating frequency of the circuit. The product has a more complete switching performance, with optimized positive temperature coefficient characteristics and lower gate conduction charge, which effectively improves the current density. In parallel mode, the positive temperature coefficient can play a safe, reliable and efficient current sharing performance.

"IR has been committed to providing leading automotive-specific solutions, and these new devices effectively meet the high-speed and high-voltage requirements of DC-DC automotive applications," said David Pan, IR's vice president of sales for Asia Pacific.

The new device meets AEC-Q10x standards and is developed under IR's automotive quality philosophy of zero defects. The environmentally friendly materials used are lead-free and comply with the regulations on the Control of Hazardous Substances in Electronic Products.