Emerging Applications and Future Trends of SiC and GaN in Electric Vehicles

IDTechEx has predicted through market research that by 2023, SiC inverters will account for 28% of the BEV market. GaN HEMT is an emerging technology that may become the next major disruptor in the electric vehicle market. They have key efficiency advantages, but face significant challenges in adoption, such as their ultimate power handling capabilities. There is considerable overlap between SiC MOSFETs and GaN HEMTs, and both will have a place in the automotive power semiconductor market.

SiC plays an important role in the power electronics of electric vehicles due to its excellent thermal conductivity, high breakdown voltage and low on-resistance. The high power density and efficiency of SiC devices enable electric vehicles to operate at higher performance while extending battery life. The successful application of SiC MOSFET in Tesla Model 3 marks a commercial breakthrough in SiC technology in the field of electric vehicles. With the continuous advancement of technology, the application of SiC in electric vehicle inverters, on-board chargers (OBCs) and DC-DC converters is expected to increase further, especially in electric vehicles with 800V high voltage platforms.

With its ultra-fast switching speed, high efficiency and compact size, GaN shows unique advantages in high-frequency applications in electric vehicles. GaN devices are not only suitable for applications such as wireless charging, LiDAR and audio amplifiers, but also enable faster charging speeds and higher power density in on-board chargers (OBCs), thereby reducing the size and weight of the OBC. In addition, the application of GaN technology in traction inverters helps improve the overall performance and range of the vehicle while reducing system costs. As GaN technology matures, its application in the field of electric vehicles is gradually expanding, forming high-performance applications that compete with SiC.

Figure: Emerging applications and future trends of SiC and GaN in electric vehicles

SiC and GaN are expected to play a more critical role in the field of electric vehicles in the next few years. As the electric vehicle industry pursues higher efficiency and longer driving range, the application of these two materials will continue to increase. The development of integrated GaN power ICs will promote the miniaturization, lightweight and high efficiency of electric vehicle power systems. At the same time, electric vehicles with high-voltage platforms are expected to bring new growth opportunities for SiC and GaN power devices.

In addition, as the technology matures and cost-effectiveness improves, SiC and GaN are expected to replace traditional silicon-based semiconductors in a wider range of applications in electric vehicles. This will not only drive further improvements in the performance of electric vehicles, but will also accelerate the popularization of electric vehicles and contribute to reducing carbon dioxide emissions in the road sector.

SiC and GaN are key semiconductor materials for the future of electric vehicles. Their application and development will have a profound impact on the technological progress and market structure of the electric vehicle industry.

IDTechEx predicts that SiC MOSFET market share will be well over 50% by 2035, with the automotive power semiconductor market set to grow significantly. SiC MOSFETs offer solutions to many issues facing the electric vehicle market: range anxiety, fast charging, sustainability, and the rise of 800V architectures.

At the same time, IDTechEx also made a prediction for GaN, saying that GaN will enter the electric vehicle power electronics market within 5 years. The way to enter the market varies depending on the component: in the early stage, it was the on-board charger and DC-DC converter, and in the later stage, it was the traction inverter.