Development of Ku-band Multi-stage Power Amplifier

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A Ku-band multi-stage power amplifier was developed. The amplifier uses a difficult but small-sized inter-stage shared matching circuit for inter-stage matching. The index requirements were met.
    Keywords: power amplifier, multi-stage, high gain


1 Types of multi-stage power amplifier cascades [1]
   There are generally three types of amplifier cascades:
  (1) Adding an isolator between amplifiers. In this method, each amplifier is first debugged and matched separately, and then connected in series through an isolator. The advantage of this method is that the amplifier chain basically does not need to be debugged after cascading, and the working stability is good. The disadvantage is that the system cost is relatively high, and the volume and weight are large.
  (2) Direct cascading without adding an isolator between amplifiers. In this method, each amplifier is also debugged and matched separately, but no isolator is added during connection. This method is more of a compromise and is often used in communication systems and some low-cost transceiver equipment. It does not require much volume, but after direct cascading, it needs to be debugged according to the situation.
  (3) Sharing matching circuits between amplifiers. Its characteristic is that the output matching circuit of the previous amplifier and the input matching circuit of the next amplifier are shared, that is, the output impedance of the previous solid-state power device is directly matched to the input impedance of the next solid-state power device. The advantages of this method are saving volume and weight, but it is difficult to design, has a high debugging risk, and is very easy to damage the solid-state power device. This cascade method is more common in MMIC (Monolithic Microwave Integrated Circuit).
  Combining the advantages and disadvantages of the three cascades and the system's requirements for the volume of the power amplifier, the third cascade method is selected. This method is difficult and requires accurate parameters of the amplifier tube and accurate matching circuit.
2 Power amplifier indicators
  The indicators of the power amplifier are as follows: operating frequency is 17.7 GHz~18 GHz; gain ≥23 dB; output power P (1 dB) ≥19 dBm; power fluctuation ≤1 dB; input and output standing wave ratio ≤2.5; size is 25mm×20 mm.
3 Power amplifier die selection
  The system requires the power amplifier gain to be greater than 25 dB and the output power to be 19 dBm. The power amplifier die AF08P2-000 of Alpha Company is selected. The parameters of the die are as follows: Vds=5 V, Ids=140 mA in typical working state; 8.5 GHz gain 9 dB; 1 dB power compression point 24dBm. The source of the die has been connected to the metal on the back through a through hole, so when using it, you only need to directly ground the metal on the back, and there is no need to connect the source to the ground.
4 Design of power amplifier
  Alpha provides the S parameters of the typical working state of the amplifier die. S12 is very small〔2〕, so a one-way design method can be used. The above S parameters are used as a black box to design the circuit in Ansoft Serenade. Using the S parameter circuit, you can only design the matching circuit of the circuit, but not add bias voltage. However, since the design of general amplifiers is most concerned about the matching circuit of the amplifier (high-power nonlinear amplifiers require large signal models). When designing, the bias circuit part is also designed in the circuit. As long as the filtering performance of the designed circuit is good, the impact is not great. With the help of the matching tool in Serenade, the general framework of the three-stage amplifier can be obtained. Then optimization is performed to obtain the final circuit, as shown in Figure 1.



  In Figure 1, C represents capacitance; T represents "T" junction; O represents open microstrip line; R represents fan-shaped biased microstrip line; G represents ground; and L represents inductance.
  The DC blocking capacitor in the above circuit uses Alpha's chip capacitor SC04701518, with a capacitance value of 47 pF, an insertion loss of less than 0.05 dB, and a size of 0.457 mm × 0.457 mm. The capacitor installation method is shown in Figure 2.


5 Performance Analysis of Power Amplifier
   Figure 3 is a gain curve of the power amplifier. In the required frequency band, the gain of the amplifier is greater than 27.5 dB.




  The input and output standing wave ratio of the power amplifier is also an important parameter. It affects the performance of the circuits before and after the amplifier. The input and output standing wave ratio curves of the power amplifier are shown in Figure 4. The maximum standing wave ratio within the frequency band is 2.2.
6 Board diagram of the power amplifier
   The power amplifier is shown in Figure 5. Size: 21 mm × 17 mm. In order to facilitate debugging, the circuit is powered by dual power supplies. The filter uses fan-shaped bias, inductance (isolation of RF signals) and large and small capacitors (filtering RF signals and power supply ripple).
7 Overall layout of the power amplifier circuit
  The width A of the amplifier shielding box is a key dimension〔3〕 and must satisfy the formula where λH is the wavelength of the high-end frequency of the working frequency band. If the above formula is not satisfied, waveguide propagation may occur in the box. Microwave radiation will be generated at uneven places such as the open end, jump, and branch line of the microstrip line in the circuit. The electromagnetic field will propagate in the space inside the box in the form of a waveguide mode. When the reverse propagating wave forms positive feedback, the gain flatness in the frequency band deteriorates and peaks appear at certain frequency points. When the feedback is too strong, self-oscillation is also prone to occur.   To meet the formula, the box width may be very small at higher frequencies. For example, for an amplifier operating at 17.7 GHz, the maximum allowable box width is 8.4 mm, while the calculated power amplifier circuit width is 17 mm. At this time, there is no place to place the bias circuit. There are two common solutions: one is to place the bias circuit resistor and capacitor components on the back of the microstrip substrate; the other is to design the microstrip circuit in an inner box with a slot width A, and the width meets the requirements of the cutoff waveguide formula. The components of the bias circuit are set in the two outer box slots with a width of B, and the feed leads can be slotted in the middle longitudinal partition or introduced with a through-hole capacitor.   Neither of these two methods is applicable to this system. Microstrip lines are laid on both sides of this system, so the first method is not applicable; due to the high difficulty of this amplifier, it may need to be debugged. If the second method is used, the debugging will definitely be inconvenient. Therefore, the metal partition method is used to isolate the RF circuit from the bias circuit. Make the microstrip circuit width A meet the requirements of the cutoff waveguide formula. Using this method, the partition can be removed or plugged in as needed during debugging, which is very convenient to operate. In addition, metal partitions are also used to isolate the stages. The actual picture of the three-stage power amplifier is shown in Figure 6.
    



8 Test results and conclusions of the power amplifier
    The test results of the developed power amplifier are as follows:
  within the frequency range of 17.7 GHz to 18 GHz, the output power of the power amplifier is greater than 20 dBm, and the output power fluctuation is less than 1 dB. See Figure 7. 



  Figure 8 shows the gain curve of the power amplifier. In the range of 17.7 GHz to 18 GHz, the gain of the power amplifier is greater than 26 dB.
  In addition, the input and output standing wave ratio of the amplifier is less than 2.4 within the operating frequency range.
    The test results show that the performance of the power amplifier meets the index requirements.

References
1 Dai Yuefei. The influence of amplifier standing wave on amplifier system performance in direct cascade without isolation. Modern Electronics, 2001 (2): 58-62
2 Yan Hua. Microwave Solid-State Circuits. Beijing: Beijing Institute of Technology Press, 19953 China Integrated Circuit Encyclopedia Editorial Committee. Microwave Integrated Circuits. Beijing: National Defense Industry Press, 1995 
Reference address:Development of Ku-band Multi-stage Power Amplifier

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