Serial number identification of modern memory chips
1. The identification format on the SDRAM memory chip of HYUNDAI is as follows (here we are talking about the new version of HY memory chip after September 30, 2000):
HY XX X XX X X X X XX X -XX
① ② ③ ④ ⑤ ⑥ ⑦ ⑧ ⑨ ⑩
The first field is composed of HY, which represents the product of HYUNDAI.
The second field represents the product type: 57 is usually used to represent SDRAM.
The third field represents the voltage: V is usually used to represent the rated voltage of SDRAM 3.3V.
The fourth field represents the density and refresh rate of a memory chip: 64 represents 64Mbit, 4K refresh; 65 represents 64Mbit, 8K refresh; 28 represents 128Mbit, 4K refresh; 56 represents 256Mbit, 8K refresh.
The fifth field represents the data bandwidth: 4 represents 4bit, 8 represents 8bit, 16 represents 16bit, and 32 represents 32bit.
The sixth field represents the number of banks in the memory chip: 1 represents 2BANK; 2 represents 4BANK.
The seventh field represents the electrical interface: 0 represents LVTTL; 1 represents SSTL_3.
The eighth field represents the chip revision: blank or H represents the 1st edition, A or HA represents the 2nd edition; B or HB represents the 3rd edition; C or HC represents the 4th edition, and so on.
The ninth field represents the packaging method: T represents TSOP; Q represents TQFP; I represents BLP; L represents CSP (LF-CSP).
The tenth field represents the speed of the memory chip: Modern Electronics has gradually stopped producing memory chips with numbers at the end of the number, such as -10S, -7J, -75, etc. since September 30, 2000, and has adopted English letters as the new numbering method: H represents 7.5ns (PC133 CL=3); P represents 10ns (PC100 CL=2); S represents 10ns (PC100 CL=3).
For example, a memory chip marked as "HY57V28820HCT-H" (see Figure 1) refers to HY's 128Mbit SDRAM memory chip, refresh rate is 4K Ref, data bandwidth is 8 bits, Bank is 4, interface is LVTTL, chip revision is 4th edition, speed is 7.5ns (PC133 CL=3).
2. Identification of Hyundai DDR SDRAM memory chips
The identification format on Hyundai's DDR SDRAM memory chips is as follows:
HY XX X XX X X X X -XX
① ② ③ ④ ⑤ ⑥ ⑦ ⑧ ⑨
The first field consists of HY, which means it is a Hyundai product.
The second field represents the product type: 5D is usually used to represent DDR SDRAM chips.
The third field represents the voltage: U is usually used to represent the rated voltage of DDR SDRAM, which is 2.5V.
The 4th field represents the density and refresh rate of a memory chip: 64 represents 64Mbit, 4K refresh; 65 represents 64Mbit, 8K refresh; 28 represents 128Mbit, 4K refresh; 56 represents 256Mbit, 8K refresh.
The 5th field represents the data bandwidth: 4 represents 4bit, 8 represents 8bit, 16 represents 16bit, and 32 represents 32bit.
The 6th field represents the number of banks in the memory chip: 1 represents 2BANK; 2 represents 4BANK.
The 7th field represents the electrical interface: 2 is usually used to represent the 184-pin DDR SDRAM interface.
The 8th field represents the packaging method: T represents TSOP; Q represents TQFP; I represents BLP; L represents CSP (LF-CSP).
The 9th field represents the speed of the memory chip: K represents DDR266a; H represents DDR266b; L represents DDR200.
For example, a memory chip marked as "HY5DU28820HCT-H" (see Figure 2) refers to HY's 128Mbit DDR SDRAM memory chip, refreshed as 4K Ref, data bandwidth as 8 bits, Bank as 4, packaged as TSOP, and speed as DDR266a.
III. Identification of Hyundai RDRAM memory chips
The identification format on Hyundai's RDRAM memory chips is as follows:
HY XX XXX XX X XX -X
① ② ③ ④ ⑤ ⑥ ⑦
The first field consists of HY, representing a Hyundai product.
The second field represents the product type: 5R is usually used to represent RDRAM chips.
The third field represents the density of a memory chip: 128 represents 128Mbit; 144 represents 144Mbit; 256 represents 256Mbit; 288 represents 288Mbit.
The fourth field represents the chip revision: blank or H represents the 1st version, A or HA represents the 2nd version; B or HB represents the 3rd version; C or HC represents the 4th version.
The fifth field represents the data bandwidth: 4 represents 4 bits, 8 represents 8 bits, 16 represents 16 bits, and 32 represents 32 bits.
The sixth field represents the speed identifier of the memory chip: 40 represents 40ns; 45 represents 45ns; 53 represents 53ns.
The seventh field represents the operating frequency of the memory chip: 6 represents 600MHz; 7 represents 711MHz; 8 represents 800MHz; 1 represents 1066MHz.
For example, the memory chip identifier "HY5R128HC840-H" (see Figure 3) refers to HY's 128Mbit RDRAM memory chip, the chip revision is version 4, the data bandwidth is 8 bits, the speed is 40ns, and the operating frequency is 800MHz.
Previous article:Memory chip parameters
Next article:Memory chip identification method
- Popular Resources
- Popular amplifiers
- High signal-to-noise ratio MEMS microphone drives artificial intelligence interaction
- Advantages of using a differential-to-single-ended RF amplifier in a transmit signal chain design
- ON Semiconductor CEO Appears at Munich Electronica Show and Launches Treo Platform
- ON Semiconductor Launches Industry-Leading Analog and Mixed-Signal Platform
- Analog Devices ADAQ7767-1 μModule DAQ Solution for Rapid Development of Precision Data Acquisition Systems Now Available at Mouser
- Domestic high-precision, high-speed ADC chips are on the rise
- Microcontrollers that combine Hi-Fi, intelligence and USB multi-channel features – ushering in a new era of digital audio
- Using capacitive PGA, Naxin Micro launches high-precision multi-channel 24/16-bit Δ-Σ ADC
- Fully Differential Amplifier Provides High Voltage, Low Noise Signals for Precision Data Acquisition Signal Chain
- Innolux's intelligent steer-by-wire solution makes cars smarter and safer
- 8051 MCU - Parity Check
- How to efficiently balance the sensitivity of tactile sensing interfaces
- What should I do if the servo motor shakes? What causes the servo motor to shake quickly?
- 【Brushless Motor】Analysis of three-phase BLDC motor and sharing of two popular development boards
- Midea Industrial Technology's subsidiaries Clou Electronics and Hekang New Energy jointly appeared at the Munich Battery Energy Storage Exhibition and Solar Energy Exhibition
- Guoxin Sichen | Application of ferroelectric memory PB85RS2MC in power battery management, with a capacity of 2M
- Analysis of common faults of frequency converter
- In a head-on competition with Qualcomm, what kind of cockpit products has Intel come up with?
- Dalian Rongke's all-vanadium liquid flow battery energy storage equipment industrialization project has entered the sprint stage before production
- Allegro MicroSystems Introduces Advanced Magnetic and Inductive Position Sensing Solutions at Electronica 2024
- Car key in the left hand, liveness detection radar in the right hand, UWB is imperative for cars!
- After a decade of rapid development, domestic CIS has entered the market
- Aegis Dagger Battery + Thor EM-i Super Hybrid, Geely New Energy has thrown out two "king bombs"
- A brief discussion on functional safety - fault, error, and failure
- In the smart car 2.0 cycle, these core industry chains are facing major opportunities!
- The United States and Japan are developing new batteries. CATL faces challenges? How should China's new energy battery industry respond?
- Murata launches high-precision 6-axis inertial sensor for automobiles
- Ford patents pre-charge alarm to help save costs and respond to emergencies
- New real-time microcontroller system from Texas Instruments enables smarter processing in automotive and industrial applications
- Shanghai Hangxin ACM32F070 development board + serial port prints the voltage value of the ADC channel
- Summary of vscode development process for STM32
- Verification of extremely small signals
- SparkRoad realizes VGA display
- JTAG Emulator
- The close connection between crystal oscillator and Bluetooth technology
- ADI's most popular technical articles
- 【DIY Creative LED】Main Component Description
- Design of automatic loading scheme for TMS320C6701
- GD32F chip problems and solutions