May 24, 2023, China - STMicroelectronics’ STL120N10F8 N-channel 100V power MOSFET has extremely low gate-drain charge (QGD) and on-resistance RDS(on), and a figure of merit (FoM) ratio The previous generation of similar products has increased by 40%.
The newly launched MOSFET utilizes ST's STPOWER STripFET F8 advanced technology and introduces an oxide-filled trench process to combine extremely low conduction loss and low gate charge to achieve efficient switching performance. Therefore, the maximum on-resistance RDS(on) of STL120N10F8 is 4.6mΩ (when VGS = 10V), and the efficient operating frequency reaches 600kHz.
STripFET F8 technology also ensures that the output capacitance is sized to mitigate drain-to-source voltage spikes, minimizing wasted charge and discharge energy. In addition, the body-drain diode of this MOSFET has higher softness characteristics. These improvements reduce electromagnetic emissions, simplify final system compliance testing, and ensure electromagnetic compatibility (EMC) compliance with applicable product standards.
The STL120N10F8 has excellent energy efficiency and low electromagnetic radiation, which can enhance the power conversion performance of hard-switching and soft-switching topologies. In addition, this product is the first fully industrial-grade STPOWER 100V STripFET F8 MOSFET, making it ideal for motor control, power supplies and converters for telecommunications and computer systems, LED and low-voltage lighting, as well as consumer appliances and battery-powered equipment.
The new MOSFETs also have other advantages, including very small differences in gate threshold voltages (VGS(th)), which is useful in high-current applications and simplifies the parallel design of multiple power switches. The new product is very robust and can withstand a 10µs 800A short-circuit pulse current impact.
The STL120N10F8 is in full production in the PowerFLAT5x6 package, priced from $1.04 for orders of 1000 pieces.
STL120N10F8 is packaged in PowerFLAT5x6 and is now in full production.
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