ON Semiconductor releases complete silicon carbide MOSFET module solution for electric vehicle charging

ON Semiconductor released at APEC 2021

New complete SiC MOSFET module solution for electric vehicle charging

Comprehensive portfolio of wide bandgap devices enables high-performance charging solutions

June 8, 2021 - ON Semiconductor, driving energy-efficient innovations, has released a pair of 1200 V complete silicon carbide (SiC) MOSFET 2-PACK modules, further strengthening its product portfolio for the challenging electric vehicle (EV) market.

As electric vehicle sales continue to grow, an infrastructure that meets the needs of drivers must be rolled out to provide a network of fast charging stations that allow them to quickly complete their journeys without "range anxiety". Requirements in this area are evolving rapidly, requiring power levels in excess of 350 kW and 95% efficiency to become "normal". Given the diverse environments and locations in which these chargers are deployed, compactness, robustness and enhanced reliability are challenges for designers.

The new 1200 V M1 complete SiC MOSFET 2-pack module, based on planar technology, is suitable for drive voltages in the range of 18 V to 20 V and can be easily driven with negative gate voltages. Its larger die reduces thermal resistance compared to trench MOSFETs, resulting in lower die temperature at the same operating temperature.

The NXH010P120MNF is configured as a 2-PACK half-bridge and is a 10 mohm device in an F1 package, while the NXH006P120MNF2 is a 6 mohm device in an F2 package. These packages feature press-fit leads, making them ideal for industrial applications, and an embedded negative temperature coefficient (NTC) thermistor helps with temperature monitoring.

The new SiC MOSFET modules are part of ON Semiconductor’s electric vehicle charging ecosystem and are designed to be used with driver solutions such as the NCD5700x devices. The recently launched NCD57252 dual-channel isolated IGBT/MOSFET gate driver provides 5 kV of galvanic isolation and can be configured for dual low-bridge, dual high-bridge or half-bridge operation.

The NCD57252 is available in a small SOIC-16 wide-body package and accepts logic-level inputs (3.3 V, 5 V, and 15 V). This high-current device (source 4.0 A/sink 6.0 A at Miller plateau voltage) is suitable for high-speed operation because the typical propagation delay is 60 ns.

ON Semiconductor’s SiC MOSFETs, complemented by new modules and gate drivers, offer superior switching performance and enhanced thermal management over similar silicon devices, enabling higher efficiency and power density, improved electromagnetic interference (EMI), and reduced system size and weight.

The recently released 650 V SiC MOSFETs feature a novel active cell design combined with advanced thin wafer technology to achieve best-in-class Figure of Merit (FoM) of (RDS(on)*area). Devices in this series such as NVBG015N065SC1, NTBG015N065SC1, NVH4L015N065SC1 and NTH4L015N065SC are the MOSFETs with the lowest RDS(on) in the market in D2PAK7L / TO247 packages.

The small chip size of the 1200 V and 900 V N-channel SiC MOSFETs reduces device capacitance and gate charge (Qg - as low as 220 nC), thereby reducing switching losses at the high-frequency operation required for EV chargers.

During APEC 2021, ON Semiconductor will showcase SiC solutions for industrial applications and introduce off-board charging solutions for electric vehicles at the exhibitor seminar.