High-performance silicon carbide (SiC) power semiconductor devices for switching power converters

Publisher:静逸闲云Latest update time:2014-06-16 Source: 21IC Reading articles on mobile phones Scan QR code
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 Entering the 21st century, switching power supply technology will have greater development, which requires China's power electronics, power supply, communication, devices, materials and other industries and academic circles to work together to develop products and technologies related to switching power supplies in the following directions .

  Silicon carbide (SiC) is an ideal material for power semiconductor device wafers. Its advantages are wide bandgap, high operating temperature (up to 600°C), good thermal stability, small on-resistance, good thermal conductivity, extremely small leakage current, and high DNI junction withstand voltage. It is conducive to the manufacture of high-temperature resistant, high-frequency, and high-power semiconductor switching devices, such as SiC power MOSFET and SiC IGBT.

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