Abandon FinFET! TSMC's 2nm achieves major breakthrough

Latest update time：2020-07-14

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On July 13, according to Taiwanese media reports, TSMC is rushing to advanced processes and has made major breakthroughs in 2nm research and development. It has successfully found a path to enter the gate-all-around (GAA) technology.

Previously, Samsung stated that it would be the first to introduce GAA technology in 3nm, and claimed that it would surpass TSMC in 2030 to become the world's leading logic chip foundry.

TSMC has never slackened its R&D efforts, actively invested in 2nm R&D, and achieved major technological breakthroughs, successfully finding a path to GAA. TSMC was able to make a breakthrough in the 2nm process node this time, thanks to TSMC retaining TSMC's most senior vice president, Luo Weiren, who was about to retire three years ago. The team he led made breakthroughs in process technology research and development, which led to the current results. For this reason, Luo Weiren also held a celebration banquet for the team to thank the team for their hard work.

TSMC's 3nm process is expected to start trial production at Fab 18 and Fab P4 in the first half of next year, and mass production in 2022. The industry has inferred that TSMC's 2nm process will be launched between 2023 and 2024.

TSMC said in April this year that it will continue to use FinFET (fin field-effect transistor) technology for 3nm. The main consideration is that after customers introduce the 5nm process, they can use the same design to introduce the 3nm process, so that they can continue to provide customers with cost-competitive and high-performance products.

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