Would you use silicon carbide made from silicon?
In this 6-part series, we'll introduce you to fast-growing application areas such as electric vehicles, battery charging, and data centers, and how new devices based on promising technologies are the logical replacement for silicon.
This blog post was originally published by United Silicon Carbide (UnitedSiC), which joined the Qorvo family in November 2021. The addition of UnitedSiC, a leading manufacturer of silicon carbide (SiC) power semiconductors, enables Qorvo to expand into fast-growing markets such as electric vehicles (EVs), industrial power supplies, circuit protection, renewable energy, and data center power.
Why SiC FETs are the right choice.
As we all know, “silicon” still has its place in the market, but as power efficiency and performance levels become more important to success in fast-growing sectors (i.e. electric vehicles, battery charging, data centers, etc.), new devices based on new technologies will become the logical choice to replace silicon devices. Those new devices are SiC FETs.
In a series of 6 blogs in “Would You Use Silicon Carbide Made of Silicon?”, Dr. Anup Bhalla, VP of Engineering at UnitedSiC, together with Power Systems Design (PSD), explains why SiC FETs are the right choice for a wide range of applications and how they fit into an environment that still includes MOSFETs, superjunctions, IGBTs and GaN HEMTs. This series of blogs will teach engineers about the important figures of merit associated with power transistors and diodes and what to consider when making design choices. This series of blogs will cover the concept of the Supercascode topology and how it can be used for power applications.
SiC FETs have moved beyond specialized applications and have quickly become a mainstream power solution for today’s HW power designers. If you are considering using SiC in your next design but are not sure about its product benefits, or want to learn more about this rapidly evolving SiC power solution, you can read this series of blog posts. Hope you enjoy!
Do you need to know the basics about Silicon Carbide (SiC) and Wide Band Gap (WBG) technology? This first post in a series covers the basics for readers of all levels, but also provides detailed explanations for electrical engineers working on high-power applications.
Learn more. https://www.powersystemsdesign.com/articles/are-you-sic-of-silicon-part-1/22/14274
The second post in this series explores the important role of packaging in improving the performance of power transistors. Dr. Bhalla also explains how packaging is applied to SiC technology and why packaging is critical to realizing the full potential of wide bandgap (WBG) technology.
Learn more. https://www.powersystemsdesign.com/articles/are-you-sic-of-silicon-part-2/22/14407
Developing robust and reliable on-board charger (OBC) solutions is critical to the successful adoption of electric vehicles (EVs). The faster a car can be charged, the sooner consumers will accept batteries and electric drive as a viable alternative to gasoline or diesel engines. Wide Band Gap (WBG) and Silicon Carbide (SiC) technologies meet all the requirements and are ideal for this technology, as the third post in this series will explain.
Learn more. https://www.powersystemsdesign.com/articles/are-you-sic-of-silicon-part-3/22/14585
The fourth post in this series will explore the application of electric vehicle traction inverters, starting with battery charging. Readers will learn about the approaches used by automakers in developing pure electric vehicles and what this means for the powertrain.
Learn more. https://www.powersystemsdesign.com/articles/are-you-sic-of-silicon-part-4/22/14760
Electronics involve low voltage, high voltage and very high voltage. Power semiconductor technologies such as silicon carbide (SiC) are clearly focused on overcoming the challenges in the higher voltage area. UnitedSiC has made breakthroughs in supercascode architecture and other areas, making it a leader in related device and module technology in this field. This article, written by Power Systems Design, introduces the power spectrum applicable to SiC MOSFET, SiC IGBT and their corresponding silicon devices to readers in the engineering field.
Learn more. https://www.powersystemsdesign.com/articles/are-you-sic-of-silicon-part-5/22/15016
High capacity, high quality, and higher power density are priorities for applications in the telecommunications industry. As this article shows, the requirements are becoming more stringent as 5G is rolled out on a large scale. By exploring the power topologies used by telecommunications companies and data centers, readers will understand why power developers are increasingly interested in wide bandgap (WBG) and silicon carbide (SiC) technologies.
Learn more. https://www.powersystemsdesign.com/articles/are-you-sic-of-silicon-part-6/22/15156
About the author:
Dr. Anup Bhalla
Serves as Vice President of Engineering at UnitedSiC, overseeing all product development. He joined UnitedSiC in 2012 after working at Harris, Vishay Siliconix, AOS, and was a co-founder of Alpha and Omega Semiconductor. He received his Ph.D. in Electrical Engineering from Rensselaer Polytechnic Institute and holds more than 100 patents.
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