How to squeeze out the potential of SiC devices? These packaging technologies provide reference examples

Market demand for photovoltaic storage and charging applications continues to rise

As we all know, SiC materials have excellent high-temperature performance, high efficiency, high-frequency switching capability, high temperature resistance and high reliability, which have brought revolutionary changes to the field of power electronics. These characteristics not only make SiC devices perform well in high-power applications, but also help to achieve miniaturized design of equipment and reduce the weight and volume of the overall system.

Specifically, the booming development of the SiC industry is mainly due to key applications such as solar inverters, energy storage systems and electric vehicles. SiC MOSFET and single-tube devices have effectively improved the overall performance and reliability of the system with their advantages such as low power loss, high switching frequency and high efficiency.

For example, in industrial applications, SiC MOSFET can achieve higher conversion efficiency; in energy infrastructure, SiC MOSFET can improve power density and reduce system size, weight and number of components; in electric vehicle charger applications, SiC MOSFET can also provide faster charging speed and lower cooling costs... It can be said that with the advancement of technology and the reduction of costs, the application scope of SiC devices is constantly expanding, from industrial motor drives to energy infrastructure, to electric vehicle charging equipment, promoting the transformation and upgrading of the entire energy industry.

ON Semiconductor provides complete solutions for energy infrastructure solutions

As a semiconductor manufacturer with a complete end-to-end SiC supply chain, ON Semiconductor has utilized industry-leading IGBT and SiC technologies, as well as the most efficient packaging, covering everything from raw materials to final products, from substrates to modules, and quality control throughout all links, achieving comprehensive control over the entire silicon carbide manufacturing value chain. ON Semiconductor's rich experience in device application and modeling can help users select the right silicon carbide products for their final applications, ensuring better and more reliable performance and manufacturing capabilities in the final application.

On the other hand, although SiC power devices have been considered as the key technology for the next generation of power electronic applications, how to give full play to their superior performance has brought new challenges to packaging technology: the traditional packaging has large stray inductance parameters, which is difficult to match the fast switching characteristics of the device; when the device works at high temperature, the packaging reliability is reduced; how to match the multifunctional integrated packaging of the module with the high power density requirements, etc. Therefore, from high temperature stability to module integration, to environmental factors and test verification, the research and development of packaging technology is progressing in parallel with SiC device technology.

✦Package

ON Semiconductor offers the following packages

TOLL package is a new product on the market, and we will introduce it in particular.

✦TOLL package

The ability to provide highly reliable power designs in a small space is becoming a competitive advantage in many areas, including industrial, high-performance power supplies and server applications. ON Semiconductor was one of the first in the industry to launch a TO-Leadless (TOLL) packaged SiC MOSFET , which meets the rapidly growing demand for high-performance switching devices suitable for high-power density designs. The TOLL package has a footprint of only 9.90 mm x 11.68 mm, saving 30% PCB area compared to the D2PAK package. Its profile is only 2.30 mm and occupies 60% less volume than the D2PAK package.

In addition to its smaller size, the TOLL package also offers better thermal performance and lower package inductance than the D2PAK 7-lead, and its Kelvin Source configuration ensures lower gate noise and switching losses. This includes a 60% reduction in turn-on losses (EON) compared to devices without the Kelvin configuration, ensuring significant improvements in efficiency and power density in challenging power supply designs as well as improved EMI and easier PCB design.

ON Semiconductor's first SiC MOSFET in TOLL packaging is the NTBL045N065SC1, which has a VDSS rating of 650V, a typical RDS(on) of 33 mΩ, and a maximum drain current of 73 A. The device has a maximum operating temperature of 175°C and ultra-low gate charge, which significantly reduces switching losses. In addition, the TOLL package has an MSL 1 (Moisture Sensitivity Level 1) rating, making it suitable for demanding applications including switch mode power supplies (SMPS), server and telecom power supplies, solar inverters, uninterruptible power supplies (UPS) and energy storage, as well as designs that need to meet the most challenging efficiency standards, including ErP and 80 PLUS Titanium.

✦SiC modular packaging

With the expansion of SiC device application scenarios, more and more applications require multiple devices to be integrated in one module. Therefore, integrated packaging technology has become a new research direction in the field of SiC device packaging , which not only considers the performance of each individual device, but also needs to ensure the performance, stability and reliability of the overall module.

Compared with single-tube packaging, SiC power modules have significant advantages in reducing parasitic effects, improving heat dissipation performance, and enhancing long-term reliability and temperature resistance. For example, modular packaging can reduce the increase in voltage spikes during shutdown caused by high-speed switching, while reducing the parasitic inductance of the package can reduce stress. SiC devices can operate in environments above 400°C, but the temperature of their devices is still limited by packaging materials such as molding compounds, interconnects, and wafer attachment.

Among ON Semiconductor's SiC modular packaging products, the VE-Trac B2 SiC module integrates all of ON Semiconductor's SiC MOSFET technologies in a half-bridge architecture. The bare die connection uses silver sintering technology, and the die-casting process is used to achieve a strong package, which improves energy efficiency, power density and reliability. The module complies with the AQG 324 automotive power module standard, and its SiC chipset uses ON Semiconductor's M1 SiC technology, which provides high current density, strong short-circuit protection, high blocking voltage and high operating temperature, bringing leading performance in electric vehicle main drive applications.

The progress and development of SiC material technology has brought important value to high-performance electronic devices, while the optimization and innovation of packaging technology have further promoted the performance improvement and market introduction of SiC devices. In the future, as both are further improved, we expect SiC power devices to play a greater role in power electronics applications.

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