How to choose a probe for high voltage power accurate measurement? DP0001A pats you on the shoulder~
This article is about 4,000 words and introduces the following content
• Fundamentals of Oscilloscope Probes
• Third generation wide bandgap semiconductor testing
• DP0001A High Voltage Differential Probe
How to accurately measure the high voltage power of WBG power devices, power converters or motor drives?
The high-voltage differential probe DP0001A with high bandwidth and low loading effect pats you~
DP0001A Skills Library
Accurately measure 1kV transient pulses with edge speeds (10%-90%) as fast as 1.2ns in modern switching power supplies.
共模抑制比(CMRR)超过 90 dB,能够显著简化噪声较大的高共模功率电子环境所面临的测量难题。
When used with Infiniium oscilloscopes, it supports automatic switching of attenuation ratios.
When used with the N7013A extreme temperature extension kit, it can be used over the -40 °C to +85 °C temperature range.
01.
Fundamentals of Oscilloscope Probes
The oscilloscope probe is the connection between the oscilloscope and the device under test. The selection of the oscilloscope probe will directly affect the signal quality of the oscilloscope input. Most people pay more attention to the use of the oscilloscope itself, but tend to ignore the selection of the probe.
In fact, the probe is the middle link between the measured signal and the oscilloscope. If the signal is distorted at the probe, then no matter how good the oscilloscope is, it is useless. Therefore, before measuring the signal, the first thing you need to do is to choose a suitable probe.
How to choose an oscilloscope probe?
Generally, we will make a comprehensive selection based on the following six factors:
01. Signal bandwidth
The bandwidth of the entire measurement system is determined by the oscilloscope, probe, and signal source.
☛ For an oscilloscope and probe with a Gaussian frequency response, the system bandwidth is:
☛ For a flat-responding oscilloscope and probe, the system bandwidth is:
From the system bandwidth calculation formula, we can see that the probe has a great impact on the bandwidth of the measurement system. Therefore, for high-speed differential or single-ended detection in embedded design, it is necessary to select a suitable probe to match the oscilloscope for measurement when selecting the measurement system.
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With its extremely low input capacitance and flat response, the InfiniiMax 3.5 GHz 1131B differential probe is an ideal match for Infiniium 2.5 GHz to 3 GHz oscilloscopes.
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The InfiniiMax 5 GHz 1132B differential probe is an ideal match for the Infiniium 4 GHz oscilloscopes.
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The InfiniiMax 7 GHz 1134B differential probe is an ideal match for the Infiniium 6 GHz oscilloscopes.
02. Impedance of the object being measured
When we choose a probe, it is best to choose a probe with high impedance and low capacitance to minimize the probe load of the signal source. For general debugging and fault diagnosis of most analog or digital circuits such as general CMOS and TTL circuits, a high-impedance passive probe (such as Keysight N2873A, 500 MHz, 9.5 pF input capacitance) is sufficient.
However, in the high-frequency range, such as HSIC USB for fast, low-power connections between chips, ordinary high-impedance passive probes are not suitable.
Figure 1: USB test description
This is because, although typical LVCMOS inputs have low leakage current, they require high input capacitance. HSIC USB only allows 14 pF of total capacitive load including PC board traces and receiver capacitance. Therefore, HSIC testing requires lower capacitive load.
另外,HSIC使用相对较高的频率。STROBE的基本频率为240 MHz,至少需要1.5 GHz带宽才能清楚看到STROBE和DATA之间的时序关系。所以对这类高频测量应用来说,最好直接选用有源探头(例如Keysight N2795A /N2796A, 1/2GHz 带宽, 1 pF 输入电容),价格只需1000美元左右,相比市面上4pf的无源探头也不会贵很多,关键有源探头电容负载效应显著的降低,因而可以更精确地观察快速信号,特别适合于数字系统设计、元器件设计/表征及教育研究方面的应用。
03. Signal size or dynamic range
04. Single-ended or differential measurement
05. Output impedance of the probe
06. Price
Understand the basis for selecting oscilloscope probes!
What types of oscilloscope probes are available?
02.
Third Generation Wide Bandgap Semiconductor Testing
On February 13, 2020, the release of Xiaomi's 65W gallium nitride charger attracted great attention from both inside and outside the industry. The core component of Xiaomi's 65W PD charger uses gallium nitride, which is known as a wide bandgap semiconductor material because its bandgap width is greater than 2.2eV.
In China, gallium nitride is also known as the third-generation semiconductor material. Semiconductor materials are developing very rapidly:
First generation semiconductor materials:
Mainly composed of silicon (Si) and germanium (Ge), they are mainly used in low-voltage, low-frequency, medium-power transistors and photodetectors.
Second generation semiconductor materials:
Represented by gallium arsenide (GaAs) and indium phosphide (InP), it is mainly used to make high-speed, high-frequency, high-power and light-emitting electronic devices.
Third generation semiconductor materials:
Represented by silicon carbide (SiC) and gallium nitride (GaN), they have the advantages of high thermal conductivity, high breakdown field strength, high saturated electron drift velocity and high bond energy, and can meet the new requirements of modern electronic technology for harsh conditions such as high temperature, high power, high voltage, high frequency and radiation resistance.
Figure 2: Main applications of three-generation semiconductor materials
The first generation of semiconductor materials Si power MOSFETs with faster switching speeds were introduced in 1978 to replace the slower and aging bipolar power devices of the time. The best application example of this power MOSFET is the switching power supply for desktop computers.
Since then, MOSFET has become the preferred power conversion device in the semiconductor industry. The quality of the switching power supply is related to the overall performance of the product. Therefore, accurate analysis of the power supply is particularly important in R&D and production testing.
Most voltage tests in power supply testing are floating tests and require differential probes.
When many junior engineers use multiple probes to measure power supply, their power supply products explode as soon as they are turned on, and even the oscilloscopes are damaged.
This is because the oscilloscope probes share a common ground. When measuring the primary and secondary sides of the power supply at the same time, if one probe is connected to the primary ground and the other probe is connected to the secondary ground, it is equivalent to short-circuiting the primary and secondary grounds of the power supply. The large current after the short circuit will burn out the power supply product and the probe, and even damage the oscilloscope. Therefore, when testing the voltage of the primary and secondary sides, a differential probe should be used on one side and a passive or active single-ended probe should be used on the other side.
The common mode voltage range of passive probes or single-ended active probes is small and cannot meet the test accuracy.
When there is no differential probe, one method is to use two single-ended active probes, connect them to the two analog channels of the oscilloscope, and then use the Math operation function in the oscilloscope to perform CH1-CH2 for floating measurement.
The disadvantage of this method is that it requires two oscilloscope channels, and the biggest limitation is that the common-mode voltage measurement range is extremely small . It is often encountered that the voltages of both channels are very high but the difference is very small, resulting in a large measurement error.
The common mode withstand voltage of common high-voltage differential probes is related to the attenuation ratio, which affects the test results.
The problem with high-voltage differential probes on the market is that the common-mode withstand voltage changes with the attenuation ratio.
Figure 3: Common-mode withstand voltage and attenuation ratio of high-voltage differential probes on the market
This brings great problems to the Vgs test of the upper tube. For example, the differential mode withstand voltage and common mode withstand voltage of a certain type of differential probe are both 700V at an attenuation ratio of 100:1, which is very suitable for Vds voltage testing of 500V-600V withstand voltage power devices in AC-to-DC related topologies.
However, when we need to test the Vgs voltage waveform, in order to obtain higher test accuracy and smaller vertical scale, we need to adjust the attenuation ratio to 10:1. However, under the 10:1 attenuation ratio, the common mode withstand voltage of the probe will be reduced to 70V, so it cannot be used for the upper tube Vgs test. If you need to test the upper tube Vgs voltage waveform, you can only use 100:1, which will make the Vgs test result error very large.
Most commercial high-voltage differential probes have a bandwidth of less than 300 MHz and cannot meet test requirements.
As the operating frequency of power supplies continues to increase, engineers have begun to adopt high-frequency power switch and rectifier technology. From the rise/fall time of traditional planar or trench MOSFET switches of 30ns to 60ns, the switching time of power switches such as super junction MOSFET, GaN MOSFET, SiC MOSFET and SiC Schottky rectifier is less than 5ns. In order to observe such fast signal changes, a measurement system with sufficient bandwidth is usually required.
According to the previous introduction to the measurement system bandwidth, we know that sufficient bandwidth requires not only the bandwidth of the oscilloscope but also the bandwidth of the probe. Oscilloscopes have developed rapidly over the years, and the current maximum bandwidth of real-time oscilloscopes has reached 110GHz, while oscilloscope probes have always been the bottleneck of the measurement system.
Therefore, you can't choose the wrong bandwidth of the oscilloscope. Basically, if it is a silicon-based MOSFET tube for AC to DC conversion, a bandwidth of 100MHz is enough. If it is an IGBT, a bandwidth of 50MHz to 100MHz is required. For low-voltage MOSFET tubes (DC to DC), a bandwidth of 200MHz is required. If it is a test of SiC materials, the bandwidth is generally around 200MHz, and GaN materials require a bandwidth of 400MHz.
The bandwidth requirements we mentioned earlier, such as GaN requires 400MHz bandwidth, do not just refer to the bandwidth of the oscilloscope, but the bandwidth of the entire measurement system, including the oscilloscope, probe, and extension cable. Any link between the device under test and the oscilloscope will affect the bandwidth of the test system. So, if our test system requires a bandwidth of 400MHz, then our probe must also have a bandwidth of at least 400MHz. Unfortunately, most commercial voltage differential probes cannot work at such a high frequency.
GaN material MOSFET tube testing requires high-bandwidth high-voltage differential probe testing.
Figure 4: Main application areas of third-generation semiconductors
GaN materials are mainly used in low-voltage applications, such as applications below 800V, such as 40V-200V enhanced high electron mobility heterojunction transistors (HEMTs) and 600V HEMT hybrid series switches for high power density DC/DC power supplies. Of course, there are also some applications above 800V that use GaN materials. In these applications, high-voltage differential probes are required for testing.
The demand for high temperature testing in SiC material testing is increasing, requiring probes with a wide temperature range.
SiC materials are mainly used in high-voltage applications. Because of its ability to withstand high temperatures (around 300°C is no problem), its main application scenarios are in the fields of automobiles and photovoltaic inverters. The application of these devices will greatly improve the entire power system.
In summary, for the testing of wide bandgap material power devices, we need a complete test system including an oscilloscope, an oscilloscope probe, and test software. The specific requirements for the oscilloscope probe are as follows:
01
The electrical performance meets the requirements - bandwidth, input voltage range (single-ended or differential), low noise, high input impedance, and high common-mode rejection ratio;
02
The front end of the probe meets the specification requirements;
03
Probe usability;
04
Does the probe have overload protection?
05
The temperature range meets the specification requirements, for example, automotive testing needs to be around 85°C;
06
High common mode rejection ratio to prevent common mode signals from affecting the output;
For power engineers, in addition to testing the device itself, they are more concerned about the performance of the device in the circuit board, such as the Vds voltage and loss of the device during operation. There are two main reasons for device loss: (1) withstand voltage breakdown; (2) loss. Several issues that need to be paid attention to during the test are:
Figure 5: Issues to note when testing device loss
In addition to the above-mentioned issues, the selection of the ground for floating ground measurement and the inability to test loss & SOA at the same time are also issues that we need to pay attention to.
03.
DP0001A High Voltage Differential Probe
Designed for accurate high-voltage power measurements, what are the specific features of the high-voltage differential probe DP0001A?
Figure 6: DP0001A high voltage differential probe
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The DP0001A is a 400 MHz high voltage differential probe designed for making accurate high voltage power measurements .
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With 2 kV mains isolation or 1 kV CAT III rated working voltage, the DP0001A can meet today’s WBG power equipment testing, power converter or motor drive testing needs.
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The DP0001A probe features high bandwidth and low loading effect. Therefore, it can accurately measure 1kV transient pulses with edge speeds (10%-90%) up to 1.2ns in modern switching power supplies.
•
DP0001A 探头其共模抑制比(CMRR)超过 90 dB,能够显著简化噪声较大的高共模功率电子环境所面临的测量难题。
Compared with traditional IGBTs, high-voltage silicon-based MOSFETs, etc., SiC and GaN wide-bandgap power devices have faster switching speeds and therefore require higher test bandwidths.
The DP0001A high-voltage differential probe can provide a 2KV test voltage range with a 400MHz bandwidth, which effectively solves the test challenges brought by wide-bandgap power devices.
Next, let's go through a 9-minute video .
Learn more about this probe!
The DP0001A high-voltage differential probe adopts a special design. The common-mode withstand voltage does not change with the change of the attenuation ratio. At a low attenuation ratio, it still maintains a high bandwidth and common-mode withstand voltage, which is very suitable for the Vgs voltage test of the upper tube. In particular, it is used to test the Vgs voltage waveform of SiC and GaN wide bandgap power devices with high bandwidth requirements.
Figure 6: Common-mode withstand voltage of DP0001A high-voltage differential probe
In addition, when the DP0001A is used with an Infiniium oscilloscope, the probe supports automatic attenuation ratio switching, that is, the probe attenuation ratio is automatically set to a value that matches the test, so that the dynamic range of the probe is greater than or equal to the dynamic range required to measure the current input signal.
Finally, Keysight Technologies provides a complete series of probe products to meet various test needs. For details, please click the button to download in the PDF file below:
Figure 7: Keysight's complete probe product line
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Resources include the poster A Signal's Journey Inside an Oscilloscope, a complete line of Keysight oscilloscope probes.
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references:
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USB and HSIC Protocol Triggering and Decode
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Briefing on the Third Generation Semiconductor Industry Technology Innovation Strategic Alliance
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Switching Power Supply Design (3rd Edition), Pressman, Abraham I, Electronic Industry Press, 2010.
About Keysight Technologies
We are committed to helping enterprises, service providers and government customers accelerate innovation and create a secure and connected world. Since the founding of HP in 1939, Keysight Technologies has been operating independently as a new electronic test and measurement company on November 1, 2014. We continue to uphold the same entrepreneurial spirit and passion to start a new journey, inspire global innovators and help them achieve goals beyond imagination. Our solutions are designed to help customers innovate in 5G, automotive, IoT, network security and other fields.
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