Notice on holding the "Microwave and Terahertz Applications Seminar on Germanium-SiBiCMOS Technology"
: Notice on holding the "Microwave and Terahertz Applications Seminar of Germanium-Si BiCMOS Technology"
Over the past decade, there has been an increased interest in the spectrum within the THz gap (30 GHz to 30 THz) for various applications, such as industrial sensors and imaging applications in the mm and submm range, point-to-point wireless communications, extremely wideband ADCs, 400 Gb/s optical (backbone) transmission, high-resolution 150 GHz automotive radar, and high-linearity amplifiers for mobile communications. In addition, this band has many applications at the circuit and system level, such as health (medical devices, skin and genetic screening), materials science (security inspection and research), mass transportation (security inspection, in-seat communication), industrial automation (sensors), communications (terrestrial, satellite), and space exploration. However, the commercial market for these high-performance circuits and systems is driven mainly by cost, form factor, and energy efficiency. Some applications in the mm and submm range cannot be addressed by digital CMOS processing technology due to the parasitic effects of high frequency (HF) and the limitation of CMOS cutoff frequency. Moreover, due to the diversity of commercial applications, the volume is not large enough to use advanced digital CMOS processes and some passive devices. A more cost-effective solution is to embed high-performance silicon germanium (SiGe) modular integration of heterojunction bipolar transistors (HBT) and dedicated passive devices for high-frequency applications into not very high-end CMOS processes. The resulting BiCMOS technology has become a mainstream manufacturing platform. A wide variety of existing high-frequency products within the platform are provided by semiconductor foundries and research institutions such as IBM/GlobalFoundrie, ST Microelectronics' 55nm SiGeC BiCMOS process, and IHP's world's fastest SiGe BiCMOS process (130nm) with a cutoff frequency of more than 0.5 terahertz.
Course 1 will provide a detailed introduction to the physical principles of SiGe HBT and the process integration solutions of existing CMOS platforms, and will also compare the processes of RF-CMOS, SiGe BiCMOS and III/V technologies.
For circuit designers, a good design environment and the most advanced CAD tools are important. Course 2 shows details on SiGe HBT modeling and reliability, as well as special RF components in the process design package that supports RF design.
Course 3 will focus on the advanced technology modules of SiGe BiCMOS technology for RF applications. The following course 4 will involve design examples from 10GHz to 500GHz. Competitive RF-CMOS, SiGe design characteristics and III-V technology will also be compared in course 4.
In Course 5, three latest design examples related to industry applications will introduce the development of products on SiGe BiCMOS process lines in more detail.
In Course 6, Silicon Radar, a German design company (spun off from IHP), will show us radar products based on SiGe BiCMOS technology at 24 GHz and 120 GHz. A 120GHZ radar chipset will also be demonstrated on site. In the demonstration, we will focus on RF packaging concepts and RF test issues in product development.
In addition to its importance in microwave applications, SiGe technology has opened a door to success in developing terahertz products in the near future. Not only in microwave applications, this latest global research topic will also be mentioned in our courses. In particular, in Course 7, we will show the research progress of Chinese research institutes using IHP's SiGe technology over the years.
Finally, in Course 8, IHP's MPW foundry service will be introduced, which shows a very convenient way for future design companies to move to SiGe BiCMOS technology.
This conference is suitable for foundry process engineers, managers and designers focusing on high-frequency applications (high-speed transmission, radar applications, millimeter-wave imaging and detection). In addition, the display of different products based on SIGE BICMOS process is very attractive to designers and customers who want to have similar products. Of course, this conference also welcomes senior managers of domestic foundry companies to participate in the discussion of possible cooperation between IHP and local foundries with BICMOS process.
Meeting time: March 17-18, 2016 (2 days)
Registration time: March 17, 2016, 9:00-9:30 am
Meeting place: Shanghai Integrated Circuit Technology and Industry Promotion Center (Lecture Hall on the 1st floor)
Building 21, No. 1388, Zhangdong Road, Zhangjiang Hi-Tech Park, Pudong New Area, Shanghai
The registration fee for this seminar is RMB 2,500 per person (including teaching fees, venue rental fees, material fees, and lunch during the membership period). Participants are responsible for their own transportation, food and accommodation expenses (the registration receipt will provide relevant agreement hotel information for selection).
Group registration discount: 3 people (7,000 yuan in total), 4 people (8,800 yuan in total), group registration discounts for 5 people and above are negotiable;
Registration discount for current students: 1,800 yuan/person
Please remit the conference registration fee to:
Account name: Shanghai Linn Information Consulting Co., Ltd.
Bank of Account: Shanghai Bank Caoyang Branch
Account number: 31658603000624127
All units are requested to actively select personnel to participate after receiving the notice. The registration deadline is March 11, 2015. Please send the registration receipt form by email or fax to:
Email: 416000888@qq.com
Registration consultation phone number: 13174190103
6. Specific arrangements for the meeting
Day 1: March 17, 2016
(Thursday)
Topic: SiGe HBTs integrated in a CMOS platform - By Dr. A. Mai
-Silicon Germanium Heterojunction Bipolar Transistor (SiGe HBT) Integrated in CMOS Platform——Dr. A. Mai
-Physics of SiGe HBT
-Detailed
Technology flow of SiGe HBT in a CMOS platform
-Process
comparison RF-CMOS, SiGe BiCMOS,
III/V Technologies
Day 1: March 17, 2016
(Thursday)
Topic: Circuit Design platform for SiGe HBTs – By Dr. RF Scholz
-Circuit Design Platform for Germanium-Silicon Heterojunction Bipolar Transistors - Dr. RF Scholz
-Modelling
and Reliability of SiGe HBTs
-Process Design Kit for RF
Design
Day 1: March 17, 2016
(Thursday)
Topic: High end RF Technology Modules on CMOS/BiCMOS a More than Moore strategy- By Dr. M.
Kaynak
-BiCMOS embedded RF-MEMS
-BiCMOS
embedded
Through
Silicon Vias
-Microfluidics for THz bio-sensing applications
-Fan out wafer level packaging (eWLB
)
for
RF applications
Day 1: March 17, 2016
(Thursday)
Topic: Overview
SiGe Circuit Design – By Dr. M.
Kaynak
-Application comparison RF-CMOS, SiGe
BiCMOS, III/V Technologies
-Selected
SiGe Design Examples from 10 GHz to 500
GHz
Day 2: March 18, 2016
(Friday)
Topic: Wireless Applications: From research to product - By Dr. Y.
Sun
-60 GHz for communication
-120
GHz Radar on chip solution
-77
GHz Radar for Automotive: front-end solution chipsets
pre-release
Day 2: March 18, 2016
(Friday)
Topic: Silicon Radar – Experts on MMICs Radar Products - By D. Genschow
- Silicon Radar - The Star in Monolithic Microwave Integrated Circuit (MMIC) Radar Products - Dr. D. Genschow
-24 GHz Radar Frontend Chips
24GHz radar front-end chips
-Packaging Concept and RF Testing on 120 GHz Radar reference product 120GHz
radar product packaging concept and RF testing
-120 GHz Demonstration Board – on site demo
120GHz on-site demonstration
Day 2: March 18, 2016
(Friday)
Topic: TMillimetre-wave and THz Applications – SiGe Design Research in China–By Prof. YZ Xiong
- Research on Germanium Silicon Design in China - Application of Millimeter Wave and Terahertz - Professor Xiong Yongzhong
-W-band transcevier
W-band transcevier
-D-band transceiver
D-band transceiver
-340 GHz transceiver
340GHz transceiver
Day 2: March 18, 2016
(Friday)
Scholz
6. Introduction of lecturers
Dr. Andreas Mai
-Head of the “Process Integration” project team of IHP Technology Department
Dr. Andreas Mai studied physics at the Technical University of Brandenburg and obtained his diploma at AMD Dresden in 2006. He then joined IHP Technology as part of the process integration project group for the integration of 130nm SiGe-BiCMOS processes for RF-LDMOS transistors. He obtained his PhD in 2010 and became project leader responsible for technology coordination, yield improvement and stability of IHP MPW process technology. In 2013, he became head of the project group “Process Integration” in IHP Technology, responsible for services and certain research activities at IHP. Since the beginning of 2015, he has been responsible for the production line and technology services for 200mm SiGe-BiCMOS.
Dr. Mehmet Kaynak
-IHP Technical Group Project Leader
Dr. Mehmet Kaynak received his bachelor’s degree from Istanbul Technical University, Department of Communication Engineering, in 2004, his master’s degree from Sabanci University, Istanbul, Turkey, in 2006, and his PhD from Technical University of Berlin, Germany, in 2014. In 2008 he joined IHP Microelectronics Frankfurt Technical Group, Germany, and from 2008 to 2015 he was responsible for the development of IHP MEMS. Since 2015 he has been a project leader in the IHP Technical Group, and Dr. Kaynak is a part-time professor at Sabanci University, Turkey, and he is setting up a joint laboratory between IHP and Sabanci University. Dr. Kaynak has been working on the development of RF-MEMS switches in BiCMOS processes for mmWave applications for more than 5 years, and he also has experience in RF and mmWave silicon-based circuits. His other research interests are integrated CMOS-MEMS technologies, the development of RF MEMS passive components, thermal and thermomechanical properties of thin film structures and modeling of these with finite element analysis. Recently he has initiated research activities in 3D heterogeneous integration and microfluidics at IHP. Dr. Kaynak has authored or co-authored more than 100 articles in peer-reviewed journals and conference publications, and holds 7 patents in RF-MEMS technology. He has participated in many different projects supported by the German Federal Ministry of Education and Research (BMBF) and the European Union (EU), and served as the leader of the EU's independent FLEXWIN and Nanotechnology projects. He currently serves as a member and reviewer for several international conferences and journals, such as IEEE NEMS, IEEE IMS, IEEE Radio Wireless Week, IEEE SiRF, EuMW, GeMiC, MEMSWAVE, IEEE Transactions on Microwave Theory and Techniques, IEEE Microwave and Wireless Components Letters, IEEE Transactions on Antenna and Propagation, Elsevier Microelectronics Engineering. He served as the General Chair of the 2013 MEMSWAVE Conference and the TPC Chair of the 2013 IEEE SiRF. He is a member of the European Space Agency (ESA) Micro-Nano Technology (MNT) Group, the EuMAs Task Force RF MEMS, and the IEEE Technical Committees MTT-21 (MEMS Components and Technologies) and MTT-10 (Biological Effect and Medical Applications of RF and Microwave). Kaynak received the 2014 Leibniz Institute Young Scientist Award.
Professor Xiong Yongzhong
- Director of the Semiconductor Device Laboratory of Microsystem and Terahertz Center of China Academy of Engineering Physics, Professor, Distinguished Expert of Sichuan Province and Chengdu City
Professor Xiong Yongzhong received his PhD in Electrical and Electronic Engineering from Nanyang Technological University (NTU), Singapore. He has been the principal investigator (PI) of the Institute of Microelectronics (IME) in Singapore for more than ten years. He is currently a professor and director of the Semiconductor Devices and Integrated Circuits Research Center of the Terahertz Research Center of Chengdu Institute of Engineering Physics, China. He is a typical representative in the field of silicon-based microwave, millimeter-wave, and terahertz integrated circuit chip research in my country. At the Institute of Microelectronics in Singapore, the team led by him developed the world's first silicon-based ultra-high-speed 10Gbps 135GHz transceiver chip, 400GHz transceiver chip, and the world's smallest on-chip 135GHz and 400GHz high-efficiency high-gain dielectric antenna and substrate-integrated waveguide antenna in 2010. After returning to China in 2011, the semiconductor device laboratory led by him developed a series of terahertz (operating frequency greater than 100GHz) transceiver chips, high-speed modulators, and on-chip antennas, many of which are international firsts and the overall level is internationally leading, filling the gap in my country's high-performance integrated circuits. Among them, my country's first low-cost silicon-based X-band and Ka-band multifunctional chip and 94GHz transceiver chip were completed, which is expected to significantly reduce the cost of my country's phased array radar and contribute to the development of national defense. He is leading a team dedicated to the design and device modeling characterization of monolithic silicon-based microwave/millimeter wave/terahertz integrated circuits. He has multiple authorized patents and has written and co-written more than 200 academic papers.
Dr. Sun Yaoming
Dr. Yaoming Sun received his bachelor’s degree from Xidian University, China in 1997, his master’s degree from KU Leuven, Belgium in 2003, and his doctorate from TU Brandenburg, Cottbus, Germany in 2009. Dr. Sun worked in the field of mobile communication RF transceivers from 1997 to 2002. In 2002, he participated in the design of a Ku-band transceiver based on MCM-D technology at IMEC, Belgium. From 2003 to 2013, he was a researcher at IHP in Frankfurt Oder, Germany. During this time, he participated in the design of the first 60GHz transceiver SoC chip in Europe. Since 2010, he has led the European project “SUCCESS” to develop and successfully implement a 122GHz radar chipset. In 2013, Dr. Sun established Hong Kong Microsystem Integration to promote SiGe BiCMOS technology in Asia and provide design services and consulting.
D. Genschow
Dieter Genschow graduated from the University of Reading (UK) and the University of Applied Sciences in Berlin, Germany in 2006. He then started working as a design engineer for capacitive sensing technology at a German Tier 1 company in the automotive industry. In 2009, he joined IHP as a research assistant and worked in the field of radar system design for 6 years. In 2015, he joined Silicon Radar and is currently responsible for embedded radar system design and product management.
Dr. René Scholz
-IHP MPW and Foundry Services Project Leader
Since 2004 René Scholz has been project leader for IHP MPW and foundry services. His project group is also responsible for the development of process design packages for IHP BiCMOS technology. From 2001 to 2004 he was responsible for the IHP RF characterization and SiGe-HBT modeling research. In 2008 he received an MBA in Research Management Central and Eastern Europe from the European University Frankfurt (Oder). From 1991 to 1996 he was a PhD student at the Max Planck Institute in Halle. Project: Research on point defect silicon and diffusion of GaAs.
8. Organizational units (in no particular order)
If you think the above content is good, I believe the content of the following public account will also be helpful to your life and career. I recommend you to follow it! !
Semiconductor Industry Observer
(
icbank
)
Semiconductor Industry Observation: The first vertical media in the semiconductor industry [www.icbank.cc]
Semiconductor Circle
(
icquan
)
The semiconductor circle is a network of leading entrepreneurs, start-ups, investors, and ICT technical talents in the semiconductor industry.
Semiconductor Industry Alliance
(
ICUNION
)
Semiconductor Industry Alliance: Building a vertical club for the domestic semiconductor industry [www.icbank.org]
ICstore, the first micro-mall for purchasing and selling electronic components
If you think the above content is good, I believe the content of the following public account will also be helpful to your life and career. I recommend you to follow it! !
Semiconductor Industry Observer ( icbank )
Semiconductor Industry Observation: The first vertical media in the semiconductor industry [www.icbank.cc]
Semiconductor Circle ( icquan )
The semiconductor circle is a network of leading entrepreneurs, start-ups, investors, and ICT technical talents in the semiconductor industry.
Semiconductor Industry Alliance ( ICUNION )
Semiconductor Industry Alliance: Building a vertical club for the domestic semiconductor industry [www.icbank.org]
ICstore, the first micro-mall for purchasing and selling electronic components
Featured Posts
京公网安备 11010802033920号