Calculation of Intermodulation Distortion in CMOS Transconductance Stage:Abstract—The linearity of the transconductance stage is ofmajor concern in the design of some analog circuits. In thispaper, Volterra series expansion is used to compute theintermodulation distortion of high frequency CMOStransconductance stage with source degeneration resistor. TheMOS model used in this paper includes short-channel effectsand gate-source capacitance, gate-drain capacitance, outputresistance of MOS transistor. Analytical results are compared with simulation results and the influences of circuit parameters on circuit linearity are discussed.
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