ES1B datasheet, PDF - EEWORLD Datasheet

ES1B: Description1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC; Categorysemiconductor Discrete semiconductor; File Size201KB，3 Pages; ManufacturerMCC; Websitehttp://www.mccsemi.com

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1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	GREEN, PLASTIC, SMA, 2 PIN
state	ACTIVE
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	C BEND
terminal coating	PURE Tin
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	single
Diode component materials	silicon
Diode type	Signal diode
Maximum reverse recovery time	0.0350 us
Maximum repetitive peak reverse voltage	100 V
Maximum average forward current	1 A

	ES1B	ES1A	ES1C	ES1D	ES1G	ES1J	ES1K	ES1M
Description	1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 50 V, SILICON, SIGNAL DIODE	1 A, 150 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 200 V, SILICON, SIGNAL DIODE	1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 800 V, SILICON, SIGNAL DIODE	1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC
Number of terminals	2	2	2	2	2	2	-	-
Number of components	1	1	1	1	1	1	-	-
Processing package description	GREEN, PLASTIC, SMA, 2 PIN	Plastic, SMA, 2 PIN	SMA, 2 PIN	Plastic, SMA, 2 PIN	Plastic, HSMA, 2 PIN	SMA, 2 PIN	-	-
state	ACTIVE	ACTIVE	ACTIVE	ACTIVE	DISCONTINUED	TRANSFERRED	-	-
packaging shape	Rectangle	Rectangle	RECTANGULAR	Rectangle	Rectangle	Rectangle	-	-
Package Size	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-	-
surface mount	Yes	Yes	Yes	Yes	Yes	Yes	-	-
Terminal form	C BEND	C BEND	C BEND	C BEND	C BEND	C BEND	-	-
terminal coating	PURE Tin	-	MATTE TIN	PURE Tin	tin lead	NOT SPECIFIED	-	-
Terminal location	pair	pair	DUAL	pair	pair	pair	-	-
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy	PLASTIC/EPOXY	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	-	-
structure	single	single	SINGLE	single	single	single	-	-
Diode component materials	silicon	silicon	SILICON	silicon	silicon	silicon	-	-
Diode type	Signal diode	Signal diode	SIGNAL DIODE	Signal diode	Signal diode	Signal diode	-	-
Maximum reverse recovery time	0.0350 us	0.0200 us	0.0150 us	0.0200 us	0.0600 us	0.0600 us	-	-
Maximum repetitive peak reverse voltage	100 V	50 V	150 V	200 V	400 V	600 V	-	-
Maximum average forward current	1 A	1 A	1 A	1 A	1 A	1 A	-	-

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