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ES1C

Description
1 A, 150 V, SILICON, SIGNAL DIODE, DO-214AC
Categorysemiconductor    Discrete semiconductor   
File Size201KB,3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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ES1C Overview

1 A, 150 V, SILICON, SIGNAL DIODE, DO-214AC

ES1C Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionSMA, 2 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Diode component materialsSILICON
Maximum power consumption limit1.47 W
Diode typeSIGNAL DIODE
Maximum reverse recovery time0.0150 us
Maximum repetitive peak reverse voltage150 V
Maximum average forward current1 A

ES1C Related Products

ES1C ES1A ES1B ES1D ES1G ES1J ES1K ES1M
Description 1 A, 150 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 200 V, SILICON, SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 800 V, SILICON, SIGNAL DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC
Number of terminals 2 2 2 2 2 2 - -
Number of components 1 1 1 1 1 1 - -
Processing package description SMA, 2 PIN Plastic, SMA, 2 PIN GREEN, PLASTIC, SMA, 2 PIN Plastic, SMA, 2 PIN Plastic, HSMA, 2 PIN SMA, 2 PIN - -
state ACTIVE ACTIVE ACTIVE ACTIVE DISCONTINUED TRANSFERRED - -
packaging shape RECTANGULAR Rectangle Rectangle Rectangle Rectangle Rectangle - -
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE - -
surface mount Yes Yes Yes Yes Yes Yes - -
Terminal form C BEND C BEND C BEND C BEND C BEND C BEND - -
terminal coating MATTE TIN - PURE Tin PURE Tin tin lead NOT SPECIFIED - -
Terminal location DUAL pair pair pair pair pair - -
Packaging Materials PLASTIC/EPOXY Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy - -
structure SINGLE single single single single single - -
Diode component materials SILICON silicon silicon silicon silicon silicon - -
Diode type SIGNAL DIODE Signal diode Signal diode Signal diode Signal diode Signal diode - -
Maximum reverse recovery time 0.0150 us 0.0200 us 0.0350 us 0.0200 us 0.0600 us 0.0600 us - -
Maximum repetitive peak reverse voltage 150 V 50 V 100 V 200 V 400 V 600 V - -
Maximum average forward current 1 A 1 A 1 A 1 A 1 A 1 A - -

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