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ES1M

Description
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC
Categorysemiconductor    Discrete semiconductor   
File Size201KB,3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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ES1M Overview

1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC

ES1M Related Products

ES1M ES1A ES1B ES1C ES1D ES1G ES1J ES1K
Description 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 150 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 200 V, SILICON, SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 800 V, SILICON, SIGNAL DIODE
Number of terminals - 2 2 2 2 2 2 -
Number of components - 1 1 1 1 1 1 -
Processing package description - Plastic, SMA, 2 PIN GREEN, PLASTIC, SMA, 2 PIN SMA, 2 PIN Plastic, SMA, 2 PIN Plastic, HSMA, 2 PIN SMA, 2 PIN -
state - ACTIVE ACTIVE ACTIVE ACTIVE DISCONTINUED TRANSFERRED -
packaging shape - Rectangle Rectangle RECTANGULAR Rectangle Rectangle Rectangle -
Package Size - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE -
surface mount - Yes Yes Yes Yes Yes Yes -
Terminal form - C BEND C BEND C BEND C BEND C BEND C BEND -
Terminal location - pair pair DUAL pair pair pair -
Packaging Materials - Plastic/Epoxy Plastic/Epoxy PLASTIC/EPOXY Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy -
structure - single single SINGLE single single single -
Diode component materials - silicon silicon SILICON silicon silicon silicon -
Diode type - Signal diode Signal diode SIGNAL DIODE Signal diode Signal diode Signal diode -
Maximum reverse recovery time - 0.0200 us 0.0350 us 0.0150 us 0.0200 us 0.0600 us 0.0600 us -
Maximum repetitive peak reverse voltage - 50 V 100 V 150 V 200 V 400 V 600 V -
Maximum average forward current - 1 A 1 A 1 A 1 A 1 A 1 A -
terminal coating - - PURE Tin MATTE TIN PURE Tin tin lead NOT SPECIFIED -

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