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ES1J

Description
1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC
Categorysemiconductor    Discrete semiconductor   
File Size201KB,3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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ES1J Overview

1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC

ES1J Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionSMA, 2 PIN
stateTRANSFERRED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingNOT SPECIFIED
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Diode component materialssilicon
Diode typeSignal diode
Maximum reverse recovery time0.0600 us
Maximum repetitive peak reverse voltage600 V
Maximum average forward current1 A

ES1J Related Products

ES1J ES1A ES1B ES1C ES1D ES1G ES1K ES1M
Description 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 150 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 200 V, SILICON, SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 800 V, SILICON, SIGNAL DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC
Number of terminals 2 2 2 2 2 2 - -
Number of components 1 1 1 1 1 1 - -
Processing package description SMA, 2 PIN Plastic, SMA, 2 PIN GREEN, PLASTIC, SMA, 2 PIN SMA, 2 PIN Plastic, SMA, 2 PIN Plastic, HSMA, 2 PIN - -
state TRANSFERRED ACTIVE ACTIVE ACTIVE ACTIVE DISCONTINUED - -
packaging shape Rectangle Rectangle Rectangle RECTANGULAR Rectangle Rectangle - -
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE - -
surface mount Yes Yes Yes Yes Yes Yes - -
Terminal form C BEND C BEND C BEND C BEND C BEND C BEND - -
terminal coating NOT SPECIFIED - PURE Tin MATTE TIN PURE Tin tin lead - -
Terminal location pair pair pair DUAL pair pair - -
Packaging Materials Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy PLASTIC/EPOXY Plastic/Epoxy Plastic/Epoxy - -
structure single single single SINGLE single single - -
Diode component materials silicon silicon silicon SILICON silicon silicon - -
Diode type Signal diode Signal diode Signal diode SIGNAL DIODE Signal diode Signal diode - -
Maximum reverse recovery time 0.0600 us 0.0200 us 0.0350 us 0.0150 us 0.0200 us 0.0600 us - -
Maximum repetitive peak reverse voltage 600 V 50 V 100 V 150 V 200 V 400 V - -
Maximum average forward current 1 A 1 A 1 A 1 A 1 A 1 A - -

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