TLMO / S / Y2000
Vishay Semiconductors
Low Current MiniLED
Description
The new low current MiniLED Series have been
designed in a small white SMT package. The feature
of the device is the very small package 2.3 mm x 1.3
mm x 1.4 mm and the low forward current. The Min-
LED is an obvious solution for small-scale, high-
power products that are expected to work reliability in
an arduous environment. This is often the case in
automotive and industrial application.
19226
Features
• SMD LEDs with exceptional brightness
Luminous intensity categorized
Compatible with automatic placement equipment
IR reflow soldering
Available in 8 mm tape
Low profile package
Non-diffused lens: Excellent for coupling to light
pipes and backlighting
• Low power consumption
• Luminous intensity ratio in one packing unit
I
Vmax
/I
Vmin
≤
2.0, optional
≤
1.6
• Lead-free device
•
•
•
•
•
•
e3
Pb
Pb-free
Applications
Automotive: Backlighting in dashboards and switches
Telecommunication: Indicator and backlighting in
telephone and fax
Indicator and backlight for audio and video equipment
Indicator and backlight in office equipment
Flat backlight for LCDs, switches and symbols
Parts Table
Part
TLMS2000
TLMO2000
TLMY2000
Color, Luminous Intensity
Red, I
V
= 4.5 mcd (typ.)
Orange, I
V
= 9.0 mcd (typ.)
Yellow, I
V
= 7.1 mcd (typ.)
Angle of Half Intensity (±ϕ)
60 °
60 °
60 °
Technology
AlInGaP on GaAs
AlInGaP on GaAs
AlInGaP on GaAs
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
TLMS200. ,TLMO200. ,TLMY200.
Parameter
Reverse voltage
DC Forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
T
amb
≤
100 °C
t
p
≤
10
µs
T
amb
≤
100 °C
Test condition
Symbol
V
R
I
F
I
FSM
P
V
T
j
T
amb
Value
5
15
0.1
40
125
- 40 to + 100
Unit
V
mA
A
mW
°C
°C
Document Number 83185
Rev. 1.3, 21-Jan-05
www.vishay.com
1
TLMO / S / Y2000
Vishay Semiconductors
Parameter
Storage temperature range
Soldering temperature
Thermal resistance junction/
ambient
according to IPC 9501
mounted on PC board
(pad size > 5 mm
2
)
Test condition
Symbol
T
stg
T
sd
R
thJA
Value
- 40 to + 100
245
580
Unit
°C
°C
K/W
Optical and Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Red
TLMS200.
Parameter
Luminous intensity
1)
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage
Reverse voltage
Junction capacitance
1)
Test condition
I
F
= 2 mA
I
F
= 2 mA
I
F
= 2 mA
I
F
= 2 mA
I
F
= 2 mA
I
R
= 10
µA
V
R
= 0, f = 1 MHz
Symbol
I
V
λ
d
λ
p
ϕ
V
F
V
R
C
j
Min
2
Typ.
4.5
630
643
± 60
1.8
Max
Unit
mcd
nm
nm
deg
2.2
V
V
pF
5
15
in one Packing Unit I
Vmax
/I
Vmin
≤
2.0
Orange
TLMO200.
Parameter
Luminous intensity
1)
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage
Reverse voltage
Junction capacitance
1)
Test condition
I
F
= 2 mA
I
F
= 2 mA
I
F
= 2 mA
I
F
= 2 mA
I
F
= 2 mA
I
R
= 10
µA
V
R
= 0, f = 1 MHz
Symbol
I
V
λ
d
λ
p
ϕ
V
F
V
R
C
j
Min
4
598
Typ.
9
605
610
± 60
1.8
Max
611
Unit
mcd
nm
nm
deg
2.2
V
V
pF
5
15
in one Packing Unit I
Vmax
/I
Vmin
≤
2.0
Yellow
TLMY200.
Parameter
Luminous intensity
Peak wavelength
Angle of half intensity
Forward voltage
Reverse voltage
Junction capacitance
1)
1)
Test condition
I
F
= 2 mA
I
F
= 2 mA
I
F
= 2 mA
I
F
= 2 mA
I
F
= 2 mA
I
R
= 10
µA
V
R
= 0, f = 1 MHz
Symbol
I
V
λ
d
λ
p
ϕ
V
F
V
R
C
j
Min
3.2
581
Typ.
7.1
588
590
± 60
1.8
Max
594
Unit
mcd
nm
nm
deg
Dominant wavelength
2.2
V
V
pF
5
15
in one Packing Unit I
Vmax
/I
Vmin
≤
2.0
www.vishay.com
2
Document Number 83185
Rev. 1.3, 21-Jan-05
TLMO / S / Y2000
Vishay Semiconductors
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
100
P
V
- Power Dissipation (mW)
100
Red
I
F
- Forward Current ( mA )
80
60
40
20
0
0
20
40
60
80
100
120
10
1
1.0
17509
1.5
2.0
2.5
3.0
18556
T
amb
- Ambient Temperature (
°C
)
V
F
- Forward V oltage ( V )
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 4. Forward Current vs. Forward Voltage
40
35
I
F
- Forward Current ( mA )
I
Vrel
–
Relative Luminous Intensity
30
25
20
15
10
5
0
0
20
40
60
80
100
120
1.2
1.1
Orange
1.0
Yellow
Red
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
540 560 580 600 620 640 660 680 700
–
Wavelength ( nm )
18557
T
amb
- Ambient Temperature (
°C
)
18266
Figure 2. Forward Current vs. Ambient Temperature
Figure 5. Relative Intensity vs. Wavelength
0°
10°
20°
30°
1000
I
F
–
Forward Current ( A )
I
V re l
- Relative Luminous Intensity
t
p
/T=
0.01
0.02
0.05
100
0.1
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
0.2
0.4
0.6
0.2
0.5
10
0.01
1
0.10
1.00
10.00
100.00
95 10319
17557
t
p
–
Pulse Duration ( ms )
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
Figure 6. Forward Current vs. Pulse Length
Document Number 83185
Rev. 1.3, 21-Jan-05
www.vishay.com
3
Analog electronics
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