IRFU430APBF datasheet, PDF - EEWORLD Datasheet

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IRFU430APBF: Description5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA; Categorysemiconductor Discrete semiconductor; File Size3MB，7 Pages; ManufacturerKersemi Electronic; Websitehttp://www.kersemi.com

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IRFU430APBF Overview

5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA

IRFU430APBF Parametric

Parameter Name	Attribute value
Number of terminals	3
Minimum breakdown voltage	500 V
Processing package description	Lead FREE, plastic, IPAK-3
Lead-free	Yes
EU RoHS regulations	Yes
state	TRANSFERRED
packaging shape	Rectangle
Package Size	IN-line
Terminal form	THROUGH-hole
terminal coating	MATTE Tin OVER Nickel
Terminal location	single
Packaging Materials	Plastic/Epoxy
structure	Single WITH BUILT-IN diode
Shell connection	DRAIN
Number of components	1
transistor applications	switch
Transistor component materials	silicon
Channel type	N channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	universal power supply
Maximum leakage current	5 A
Rated avalanche energy	130 mJ
Maximum drain on-resistance	1.7 ohm
Maximum leakage current pulse	20 A

IRFU430APBF Related Products

	IRFU430APBF	IRFR430ATRLPBFA	IRFR430ATRR	SIHFR430A-E3	SIHFR430ATA
Description	5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA	5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA	5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA	5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA	5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
Number of terminals	3	3	3	3	3
Minimum breakdown voltage	500 V	500 V	500 V	500 V	500 V
Processing package description	Lead FREE, plastic, IPAK-3	Lead FREE, plastic, IPAK-3	Lead FREE, plastic, IPAK-3	Lead FREE, plastic, IPAK-3	Lead FREE, plastic, IPAK-3
Lead-free	Yes	Yes	Yes	Yes	Yes
EU RoHS regulations	Yes	Yes	Yes	Yes	Yes
state	TRANSFERRED	TRANSFERRED	TRANSFERRED	TRANSFERRED	TRANSFERRED
packaging shape	Rectangle	Rectangle	Rectangle	Rectangle	Rectangle
Package Size	IN-line	IN-line	IN-line	IN-line	IN-line
Terminal form	THROUGH-hole	THROUGH-hole	THROUGH-hole	THROUGH-hole	THROUGH-hole
terminal coating	MATTE Tin OVER Nickel	MATTE Tin OVER Nickel	MATTE Tin OVER Nickel	MATTE Tin OVER Nickel	MATTE Tin OVER Nickel
Terminal location	single	single	single	single	single
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy
structure	Single WITH BUILT-IN diode	Single WITH BUILT-IN diode	Single WITH BUILT-IN diode	Single WITH BUILT-IN diode	Single WITH BUILT-IN diode
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
Number of components	1	1	1	1	1
transistor applications	switch	switch	switch	switch	switch
Transistor component materials	silicon	silicon	silicon	silicon	silicon
Channel type	N channel	N channel	N channel	N channel	N channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR	Metal-OXIDE SEMICONDUCTOR	Metal-OXIDE SEMICONDUCTOR	Metal-OXIDE SEMICONDUCTOR	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT
Transistor type	universal power supply	universal power supply	universal power supply	universal power supply	universal power supply
Maximum leakage current	5 A	5 A	5 A	5 A	5 A
Rated avalanche energy	130 mJ	130 mJ	130 mJ	130 mJ	130 mJ
Maximum drain on-resistance	1.7 ohm	1.7 ohm	1.7 ohm	1.7 ohm	1.7 ohm
Maximum leakage current pulse	20 A	20 A	20 A	20 A	20 A

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