5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
| Parameter Name | Attribute value |
| Number of terminals | 3 |
| Minimum breakdown voltage | 500 V |
| Processing package description | Lead FREE, plastic, IPAK-3 |
| Lead-free | Yes |
| EU RoHS regulations | Yes |
| state | TRANSFERRED |
| packaging shape | Rectangle |
| Package Size | IN-line |
| Terminal form | THROUGH-hole |
| terminal coating | MATTE Tin OVER Nickel |
| Terminal location | single |
| Packaging Materials | Plastic/Epoxy |
| structure | Single WITH BUILT-IN diode |
| Shell connection | DRAIN |
| Number of components | 1 |
| transistor applications | switch |
| Transistor component materials | silicon |
| Channel type | N channel |
| field effect transistor technology | Metal-OXIDE SEMICONDUCTOR |
| operating mode | ENHANCEMENT |
| Transistor type | universal power supply |
| Maximum leakage current | 5 A |
| Rated avalanche energy | 130 mJ |
| Maximum drain on-resistance | 1.7 ohm |
| Maximum leakage current pulse | 20 A |
| IRFR430ATRR | IRFR430ATRLPBFA | IRFU430APBF | SIHFR430A-E3 | SIHFR430ATA | |
|---|---|---|---|---|---|
| Description | 5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA | 5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA | 5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA | 5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA | 5 A, 500 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| Number of terminals | 3 | 3 | 3 | 3 | 3 |
| Minimum breakdown voltage | 500 V | 500 V | 500 V | 500 V | 500 V |
| Processing package description | Lead FREE, plastic, IPAK-3 | Lead FREE, plastic, IPAK-3 | Lead FREE, plastic, IPAK-3 | Lead FREE, plastic, IPAK-3 | Lead FREE, plastic, IPAK-3 |
| Lead-free | Yes | Yes | Yes | Yes | Yes |
| EU RoHS regulations | Yes | Yes | Yes | Yes | Yes |
| state | TRANSFERRED | TRANSFERRED | TRANSFERRED | TRANSFERRED | TRANSFERRED |
| packaging shape | Rectangle | Rectangle | Rectangle | Rectangle | Rectangle |
| Package Size | IN-line | IN-line | IN-line | IN-line | IN-line |
| Terminal form | THROUGH-hole | THROUGH-hole | THROUGH-hole | THROUGH-hole | THROUGH-hole |
| terminal coating | MATTE Tin OVER Nickel | MATTE Tin OVER Nickel | MATTE Tin OVER Nickel | MATTE Tin OVER Nickel | MATTE Tin OVER Nickel |
| Terminal location | single | single | single | single | single |
| Packaging Materials | Plastic/Epoxy | Plastic/Epoxy | Plastic/Epoxy | Plastic/Epoxy | Plastic/Epoxy |
| structure | Single WITH BUILT-IN diode | Single WITH BUILT-IN diode | Single WITH BUILT-IN diode | Single WITH BUILT-IN diode | Single WITH BUILT-IN diode |
| Shell connection | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
| Number of components | 1 | 1 | 1 | 1 | 1 |
| transistor applications | switch | switch | switch | switch | switch |
| Transistor component materials | silicon | silicon | silicon | silicon | silicon |
| Channel type | N channel | N channel | N channel | N channel | N channel |
| field effect transistor technology | Metal-OXIDE SEMICONDUCTOR | Metal-OXIDE SEMICONDUCTOR | Metal-OXIDE SEMICONDUCTOR | Metal-OXIDE SEMICONDUCTOR | Metal-OXIDE SEMICONDUCTOR |
| operating mode | ENHANCEMENT | ENHANCEMENT | ENHANCEMENT | ENHANCEMENT | ENHANCEMENT |
| Transistor type | universal power supply | universal power supply | universal power supply | universal power supply | universal power supply |
| Maximum leakage current | 5 A | 5 A | 5 A | 5 A | 5 A |
| Rated avalanche energy | 130 mJ | 130 mJ | 130 mJ | 130 mJ | 130 mJ |
| Maximum drain on-resistance | 1.7 ohm | 1.7 ohm | 1.7 ohm | 1.7 ohm | 1.7 ohm |
| Maximum leakage current pulse | 20 A | 20 A | 20 A | 20 A | 20 A |
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