2.0
I
F
, INSTANTANEOUS FWD CURRENT (A)
10
I
O
, AVERAGE RECTIFIED CURRENT (A)
1.5
T
J
= 150°C
T
J
= 25°C
1.0
1.0
0.1
0.5
Pulse Width
= 300 µs
0
0
50
100
150
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
T, TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
V
F
, INSTANTANEOUS FWD VOLTAGE (V)
Fig. 2 Typical Fwd Characteristics
50
100
T
j
= 150°c
Single Half
Sine Wave
(JEDEC Method)
T
j
= 25°C
f = 1MHz
I
FSM
, PEAK FWD SURGE CURRENT (A)
40
30
C
j
, CAPACITANCE (pF)
10
20
10
0
1
10
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
10,000
100
1
1
10
V
R
, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
100
I
R
, INSTANTANEOUS REVERSE CURRENT (mA)
1000
T
j
= 150ºC
100
T
j
= 125ºC
T
j
= 100ºC
10
1.0
T
j
= 25ºC
0.1
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
•
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&
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./0•12&%#
%3 &
./0•
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
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