BB159-T datasheet, PDF - EEWORLD Datasheet

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BB159-T: DescriptionDIODE UHF BAND, 18.75 pF, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode; CategoryDiscrete semiconductor diode; File Size38KB，1 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BB159-T Overview

DIODE UHF BAND, 18.75 pF, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode

BB159-T Parametric

Parameter Name	Attribute value
Maker	NXP
package instruction	R-PDSO-G2
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE
Diode Capacitance Tolerance	4%
Minimum diode capacitance ratio	8.2
Nominal diode capacitance	18.75 pF
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
frequency band	ULTRA HIGH FREQUENCY
JESD-30 code	R-PDSO-G2
Number of components	1
Number of terminals	2
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL

BB159-T Related Products

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Maker	NXP	NXP	NXP	NXP	NXP	NXP	NXP	NXP	NXP	NXP
Reach Compliance Code	unknown	unknown	unknown	compliant	unknown	unknown	unknown	compliant	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum diode capacitance ratio	8.2	8.9	14	23.3	14.5	19.5	19.5	7.6	7.8	7.8
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE
frequency band	ULTRA HIGH FREQUENCY	ULTRA HIGH FREQUENCY	VERY HIGH FREQUENCY	VERY HIGH FREQUENCY	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	VERY HIGH FREQUENCY	VERY HIGH FREQUENCY	ULTRA HIGH FREQUENCY	ULTRA HIGH FREQUENCY TO L BAND	ULTRA HIGH FREQUENCY TO L BAND
JESD-30 code	R-PDSO-G2	R-PDSO-G2	R-PDSO-G2	O-LALF-W2	R-PDSO-G2	R-PDSO-G2	R-PDSO-G2	O-LALF-W2	R-PDSO-G2	R-PDSO-G2
Number of components	1	1	1	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2	2	2	2
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	GLASS	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	GLASS	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	ROUND	RECTANGULAR	RECTANGULAR	RECTANGULAR	ROUND	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	LONG FORM	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	LONG FORM	SMALL OUTLINE	SMALL OUTLINE
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	NO	YES	YES	YES	NO	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	WIRE	GULL WING	GULL WING	GULL WING	WIRE	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	AXIAL	DUAL	DUAL	DUAL	AXIAL	DUAL	DUAL
package instruction	R-PDSO-G2	R-PDSO-G2	R-PDSO-G2	-	R-PDSO-G2	R-PDSO-G2	R-PDSO-G2	-	R-PDSO-G2	R-PDSO-G2
Nominal diode capacitance	18.75 pF	17.5 pF	42 pF	60 pF	39.3 pF	-	-	11 pF	-	-
Other features	-	0.5% MATCHED SETS OF 4 DIODES AND 2% MATCHED SETS OF 15 DIODES ARE AVAILABLE	-	MATCHED TO 2.5%	-	CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES	CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES	MATCHED TO 3%	CAPACITANCE MATCHED TO 3% FOR ANY TWO DIODES	CAPACITANCE MATCHED TO 3% FOR ANY TWO DIODES
Minimum breakdown voltage	-	30 V	-	-	30 V	30 V	30 V	-	30 V	30 V
Maximum operating temperature	-	125 °C	-	-	125 °C	125 °C	125 °C	-	125 °C	125 °C
Minimum operating temperature	-	-55 °C	-	-	-55 °C	-55 °C	-55 °C	-	-55 °C	-55 °C
Maximum reverse current	-	0.01 µA	-	-	0.01 µA	0.01 µA	0.01 µA	-	0.02 µA	0.02 µA
Reverse test voltage	-	30 V	-	-	30 V	30 V	30 V	-	30 V	30 V

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